InP-based multiple type-II quantum-well integrated waveguide p-i-n photodiodes for mid-infrared detection

Bassem Tossoun; Ye Wang; Sadhvikas Addamane; Ganesh Balakrishnan; Archie L. Holmes; Andreas Beling

doi:10.1109/PHOSST.2017.8012707

InP-based multiple type-II quantum-well integrated waveguide p-i-n photodiodes for mid-infrared detection

Bassem Tossoun
, Ye Wang
, Sadhvikas Addamane
, Ganesh Balakrishnan
, Archie L. Holmes
, Andreas Beling

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

We present an InP-based p-i-n photodiode with multiple InGaAs/GaAsSb type-II quantum wells for 2μm detection. The fabricated photodiode shows a responsivity of 0.24 A/W at 2μm, with dark current as low as 1μA at -2V, and 3dB-bandwidth of 2 GHz under 1.55μm optical illumination.

Original language	English
Title of host publication	Summer Topicals Meeting Series, SUM 2017
Pages	175-176
Number of pages	2
DOIs	https://doi.org/10.1109/PHOSST.2017.8012707
State	Published - Aug 17 2017
Externally published	Yes

Access to Document

10.1109/PHOSST.2017.8012707

Cite this

@inproceedings{19ad225c366f40bf8449d71ab2fae543,

title = "InP-based multiple type-II quantum-well integrated waveguide p-i-n photodiodes for mid-infrared detection",

abstract = "We present an InP-based p-i-n photodiode with multiple InGaAs/GaAsSb type-II quantum wells for 2μm detection. The fabricated photodiode shows a responsivity of 0.24 A/W at 2μm, with dark current as low as 1μA at -2V, and 3dB-bandwidth of 2 GHz under 1.55μm optical illumination.",

author = "Bassem Tossoun and Ye Wang and Sadhvikas Addamane and Ganesh Balakrishnan and Holmes, \{Archie L.\} and Andreas Beling",

year = "2017",

month = aug,

day = "17",

doi = "10.1109/PHOSST.2017.8012707",

language = "English",

isbn = "9781509065707",

pages = "175--176",

booktitle = "Summer Topicals Meeting Series, SUM 2017",

}

TY - GEN

T1 - InP-based multiple type-II quantum-well integrated waveguide p-i-n photodiodes for mid-infrared detection

AU - Tossoun, Bassem

AU - Wang, Ye

AU - Addamane, Sadhvikas

AU - Balakrishnan, Ganesh

AU - Holmes, Archie L.

AU - Beling, Andreas

PY - 2017/8/17

Y1 - 2017/8/17

N2 - We present an InP-based p-i-n photodiode with multiple InGaAs/GaAsSb type-II quantum wells for 2μm detection. The fabricated photodiode shows a responsivity of 0.24 A/W at 2μm, with dark current as low as 1μA at -2V, and 3dB-bandwidth of 2 GHz under 1.55μm optical illumination.

AB - We present an InP-based p-i-n photodiode with multiple InGaAs/GaAsSb type-II quantum wells for 2μm detection. The fabricated photodiode shows a responsivity of 0.24 A/W at 2μm, with dark current as low as 1μA at -2V, and 3dB-bandwidth of 2 GHz under 1.55μm optical illumination.

UR - https://www.scopus.com/pages/publications/85029371179

U2 - 10.1109/PHOSST.2017.8012707

DO - 10.1109/PHOSST.2017.8012707

M3 - Conference contribution

SN - 9781509065707

SP - 175

EP - 176

BT - Summer Topicals Meeting Series, SUM 2017

ER -

InP-based multiple type-II quantum-well integrated waveguide p-i-n photodiodes for mid-infrared detection

Abstract

Access to Document

Fingerprint

Cite this