InP-based nionolithicallv-integrated optical gain-competition inverter

Monolithically-integrated optical gain-competition inverters are demonstrated at 1.55 μm in the InGaAsP/InP material system. The optical inverters consist of etched-facet slave lasers that are side-injected with tapered etchedfacet master lasers. Single-input optical inverters show improved quenching contrast for devices with larger taper width with respect to the slave laser length. Inverter performance also shows a dependence on the ridge width and lasing modes of the slave laser. Two-input optical inverters are characterized which demonstrate NAND and NOR logic operation at different slave laser currents.