Instability of junctions formed by low energy B implant and low temperature solid phase epitaxy growth

Lei Zhu; M. Martin; M. Hollander; Yongqiang Wang; Q. Chen; K. Ma; X. K. Yu; J. R. Liu; Wei Kan Chu; Lin Shao

doi:10.1116/1.2749529

Instability of junctions formed by low energy B implant and low temperature solid phase epitaxy growth

Lei Zhu
, M. Martin
, M. Hollander
, Yongqiang Wang
, Q. Chen
, K. Ma
, X. K. Yu
, J. R. Liu
, Wei Kan Chu
, Lin Shao

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The stability of p+ n junctions remains a critical issue for device performance. Shallow junctions formed by low temperature solid phase epitaxy growth (LTSPEG) are not stable during additional thermal processes. Anomalous boron diffusion and boron trapping by end-of-range defects are observed during additional furnace annealing. The study shows that, by adding a (MeV) implantation step before LTSPEG, B trapping and B diffusion are significantly reduced during post-LTSPEG annealing. The technique can be used as a method to increase the stability of shallow junctions formed by LTSPEG.

Original language	English
Pages (from-to)	1276-1279
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	25
Issue number	4
DOIs	https://doi.org/10.1116/1.2749529
State	Published - Aug 7 2007

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title = "Instability of junctions formed by low energy B implant and low temperature solid phase epitaxy growth",

abstract = "The stability of p+ n junctions remains a critical issue for device performance. Shallow junctions formed by low temperature solid phase epitaxy growth (LTSPEG) are not stable during additional thermal processes. Anomalous boron diffusion and boron trapping by end-of-range defects are observed during additional furnace annealing. The study shows that, by adding a (MeV) implantation step before LTSPEG, B trapping and B diffusion are significantly reduced during post-LTSPEG annealing. The technique can be used as a method to increase the stability of shallow junctions formed by LTSPEG.",

author = "Lei Zhu and M. Martin and M. Hollander and Yongqiang Wang and Q. Chen and K. Ma and Yu, \{X. K.\} and Liu, \{J. R.\} and Chu, \{Wei Kan\} and Lin Shao",

year = "2007",

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doi = "10.1116/1.2749529",

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TY - JOUR

T1 - Instability of junctions formed by low energy B implant and low temperature solid phase epitaxy growth

AU - Zhu, Lei

AU - Martin, M.

AU - Hollander, M.

AU - Wang, Yongqiang

AU - Chen, Q.

AU - Ma, K.

AU - Yu, X. K.

AU - Liu, J. R.

AU - Chu, Wei Kan

AU - Shao, Lin

PY - 2007/8/7

Y1 - 2007/8/7

N2 - The stability of p+ n junctions remains a critical issue for device performance. Shallow junctions formed by low temperature solid phase epitaxy growth (LTSPEG) are not stable during additional thermal processes. Anomalous boron diffusion and boron trapping by end-of-range defects are observed during additional furnace annealing. The study shows that, by adding a (MeV) implantation step before LTSPEG, B trapping and B diffusion are significantly reduced during post-LTSPEG annealing. The technique can be used as a method to increase the stability of shallow junctions formed by LTSPEG.

AB - The stability of p+ n junctions remains a critical issue for device performance. Shallow junctions formed by low temperature solid phase epitaxy growth (LTSPEG) are not stable during additional thermal processes. Anomalous boron diffusion and boron trapping by end-of-range defects are observed during additional furnace annealing. The study shows that, by adding a (MeV) implantation step before LTSPEG, B trapping and B diffusion are significantly reduced during post-LTSPEG annealing. The technique can be used as a method to increase the stability of shallow junctions formed by LTSPEG.

UR - https://www.scopus.com/pages/publications/34547612860

U2 - 10.1116/1.2749529

DO - 10.1116/1.2749529

M3 - Article

SN - 1071-1023

VL - 25

SP - 1276

EP - 1279

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 4

ER -

Instability of junctions formed by low energy B implant and low temperature solid phase epitaxy growth

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