Integration of complementary circuits and two-dimensional electron gas in a Si/SiGe heterostructure

We have realized complementary devices on an undoped Si/SiGe substrate where both two-dimensional electrons and holes can be induced capacitively. The design of the heterostructure and the fabrication process are reported. Magnetotransport measurements show that the induced two-dimensional electron gas exhibits the quantum Hall effect characteristics. A p-channel field-effect transistor is characterized and the operation of an inverter is demonstrated. The proof-of-principle experiment shows the feasibility of integrating complementary logic circuits with quantum devices. © 2010 American Institute of Physics.