Integration of self-assembled vertically aligned nanocomposite (La 0.7Sr0.3MnO3)1-x:(ZnO)x thin films on silicon substrates

Wenrui Zhang; Aiping Chen; Fauzia Khatkhatay; Chen Fong Tsai; Qing Su; Liang Jiao; Xinghang Zhang; Haiyan Wang

doi:10.1021/am400068h

Integration of self-assembled vertically aligned nanocomposite (La _0.7Sr_0.3MnO₃)_1-x:(ZnO)_x thin films on silicon substrates

Wenrui Zhang
, Aiping Chen
, Fauzia Khatkhatay
, Chen Fong Tsai
, Qing Su
, Liang Jiao
, Xinghang Zhang
, Haiyan Wang

Research output: Contribution to journal › Article › peer-review

59 Scopus citations

Abstract

Epitaxial (La_0.7Sr_0.3MnO₃) _1-x:(ZnO)_x (LSMO:ZnO) in vertically aligned nanocomposite (VAN) form was integrated on STO/TiN-buffered silicon substrates by pulsed-laser deposition. Their magnetotransport properties have been investigated and are systematically tuned through controlling the ZnO concentration. The composite film with 70% ZnO molar ratio exhibits a maximum magnetoresistance (MR) value of 55% at 70 K and 1 T. The enhanced tunable low-field MR properties are attributed to structural and magnetic disorders and spin-polarized tunneling through the secondary ZnO phase. The integration of LSMO:ZnO VAN films on silicon substrates is a critical step enabling the application of VAN films in future spintronic devices.

Original language	English
Pages (from-to)	3995-3999
Number of pages	5
Journal	ACS Applied Materials and Interfaces
Volume	5
Issue number	10
DOIs	https://doi.org/10.1021/am400068h
State	Published - May 22 2013
Externally published	Yes

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10.1021/am400068h

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title = "Integration of self-assembled vertically aligned nanocomposite (La 0.7Sr0.3MnO3)1-x:(ZnO)x thin films on silicon substrates",

abstract = "Epitaxial (La0.7Sr0.3MnO3) 1-x:(ZnO)x (LSMO:ZnO) in vertically aligned nanocomposite (VAN) form was integrated on STO/TiN-buffered silicon substrates by pulsed-laser deposition. Their magnetotransport properties have been investigated and are systematically tuned through controlling the ZnO concentration. The composite film with 70\% ZnO molar ratio exhibits a maximum magnetoresistance (MR) value of 55\% at 70 K and 1 T. The enhanced tunable low-field MR properties are attributed to structural and magnetic disorders and spin-polarized tunneling through the secondary ZnO phase. The integration of LSMO:ZnO VAN films on silicon substrates is a critical step enabling the application of VAN films in future spintronic devices.",

author = "Wenrui Zhang and Aiping Chen and Fauzia Khatkhatay and Tsai, \{Chen Fong\} and Qing Su and Liang Jiao and Xinghang Zhang and Haiyan Wang",

year = "2013",

month = may,

day = "22",

doi = "10.1021/am400068h",

language = "English",

volume = "5",

pages = "3995--3999",

journal = "ACS Applied Materials and Interfaces",

issn = "1944-8244",

publisher = "American Chemical Society",

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TY - JOUR

T1 - Integration of self-assembled vertically aligned nanocomposite (La 0.7Sr0.3MnO3)1-x:(ZnO)x thin films on silicon substrates

AU - Zhang, Wenrui

AU - Chen, Aiping

AU - Khatkhatay, Fauzia

AU - Tsai, Chen Fong

AU - Su, Qing

AU - Jiao, Liang

AU - Zhang, Xinghang

AU - Wang, Haiyan

PY - 2013/5/22

Y1 - 2013/5/22

N2 - Epitaxial (La0.7Sr0.3MnO3) 1-x:(ZnO)x (LSMO:ZnO) in vertically aligned nanocomposite (VAN) form was integrated on STO/TiN-buffered silicon substrates by pulsed-laser deposition. Their magnetotransport properties have been investigated and are systematically tuned through controlling the ZnO concentration. The composite film with 70% ZnO molar ratio exhibits a maximum magnetoresistance (MR) value of 55% at 70 K and 1 T. The enhanced tunable low-field MR properties are attributed to structural and magnetic disorders and spin-polarized tunneling through the secondary ZnO phase. The integration of LSMO:ZnO VAN films on silicon substrates is a critical step enabling the application of VAN films in future spintronic devices.

AB - Epitaxial (La0.7Sr0.3MnO3) 1-x:(ZnO)x (LSMO:ZnO) in vertically aligned nanocomposite (VAN) form was integrated on STO/TiN-buffered silicon substrates by pulsed-laser deposition. Their magnetotransport properties have been investigated and are systematically tuned through controlling the ZnO concentration. The composite film with 70% ZnO molar ratio exhibits a maximum magnetoresistance (MR) value of 55% at 70 K and 1 T. The enhanced tunable low-field MR properties are attributed to structural and magnetic disorders and spin-polarized tunneling through the secondary ZnO phase. The integration of LSMO:ZnO VAN films on silicon substrates is a critical step enabling the application of VAN films in future spintronic devices.

UR - https://www.scopus.com/pages/publications/84878333003

U2 - 10.1021/am400068h

DO - 10.1021/am400068h

M3 - Article

SN - 1944-8244

VL - 5

SP - 3995

EP - 3999

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 10

ER -

Integration of self-assembled vertically aligned nanocomposite (La 0.7Sr0.3MnO3)1-x:(ZnO)x thin films on silicon substrates

Abstract

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Integration of self-assembled vertically aligned nanocomposite (La _0.7Sr_0.3MnO₃)_1-x:(ZnO)_x thin films on silicon substrates