Interplay between gas adsorption and dislocation structure on a metal surface

J. De la Figuera; C. B. Carter; N. C. Bartelt; R. Q. Hwang

doi:10.1016/S0039-6028(03)00401-1

Interplay between gas adsorption and dislocation structure on a metal surface

J. De la Figuera
, C. B. Carter
, N. C. Bartelt
, R. Q. Hwang

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The influence of oxygen and sulfur on the dislocation patterns of the strained two monolayer Cu film on Ru was observed by scanning tunneling microscopy. Both oxygen and sulfur adsorption lead to the formation of vacancies that aggregate over existing dislocations in the film, thereby modifying the dislocation structure. With increasing adsorbate coverage the overall dislocation structure and pattern are transformed. The atomic mechanisms and general nature of this transformation can be explained in terms of generic dislocation reactions. This interpretation is also supported by atomistic simulations. © 2003 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	29-38
Number of pages	10
Journal	Surface Science
Volume	531
Issue number	1
DOIs	https://doi.org/10.1016/S0039-6028(03)00401-1
State	Published - May 10 2003
Externally published	Yes

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title = "Interplay between gas adsorption and dislocation structure on a metal surface",

abstract = "The influence of oxygen and sulfur on the dislocation patterns of the strained two monolayer Cu film on Ru was observed by scanning tunneling microscopy. Both oxygen and sulfur adsorption lead to the formation of vacancies that aggregate over existing dislocations in the film, thereby modifying the dislocation structure. With increasing adsorbate coverage the overall dislocation structure and pattern are transformed. The atomic mechanisms and general nature of this transformation can be explained in terms of generic dislocation reactions. This interpretation is also supported by atomistic simulations. {\textcopyright} 2003 Elsevier Science B.V. All rights reserved.",

author = "\{De la Figuera\}, J. and Carter, \{C. B.\} and Bartelt, \{N. C.\} and Hwang, \{R. Q.\}",

year = "2003",

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doi = "10.1016/S0039-6028(03)00401-1",

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T1 - Interplay between gas adsorption and dislocation structure on a metal surface

AU - De la Figuera, J.

AU - Carter, C. B.

AU - Bartelt, N. C.

AU - Hwang, R. Q.

PY - 2003/5/10

Y1 - 2003/5/10

N2 - The influence of oxygen and sulfur on the dislocation patterns of the strained two monolayer Cu film on Ru was observed by scanning tunneling microscopy. Both oxygen and sulfur adsorption lead to the formation of vacancies that aggregate over existing dislocations in the film, thereby modifying the dislocation structure. With increasing adsorbate coverage the overall dislocation structure and pattern are transformed. The atomic mechanisms and general nature of this transformation can be explained in terms of generic dislocation reactions. This interpretation is also supported by atomistic simulations. © 2003 Elsevier Science B.V. All rights reserved.

AB - The influence of oxygen and sulfur on the dislocation patterns of the strained two monolayer Cu film on Ru was observed by scanning tunneling microscopy. Both oxygen and sulfur adsorption lead to the formation of vacancies that aggregate over existing dislocations in the film, thereby modifying the dislocation structure. With increasing adsorbate coverage the overall dislocation structure and pattern are transformed. The atomic mechanisms and general nature of this transformation can be explained in terms of generic dislocation reactions. This interpretation is also supported by atomistic simulations. © 2003 Elsevier Science B.V. All rights reserved.

UR - https://www.scopus.com/pages/publications/0344059172

U2 - 10.1016/S0039-6028(03)00401-1

DO - 10.1016/S0039-6028(03)00401-1

M3 - Article

SN - 0039-6028

VL - 531

SP - 29

EP - 38

JO - Surface Science

JF - Surface Science

IS - 1

ER -

Interplay between gas adsorption and dislocation structure on a metal surface

Abstract

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