Intervalence-band photoinduced absorption in undoped GaAs/Al<inf>x</inf>Ga<inf>1-x</inf>As multiple-quantum-wells

M. Olszakier; I. Brener; E. Ehrenfreund; E. Cohen

doi:10.1016/0749-6036(90)90212-P

Intervalence-band photoinduced absorption in undoped GaAs/Al<inf>x</inf>Ga<inf>1-x</inf>As multiple-quantum-wells

M. Olszakier
, I. Brener
, E. Ehrenfreund
, E. Cohen

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We report the results of photoinduced absorption (PA) measurements in the energy range appropriate for transitions between the heavy holes (hh) and the spin orbit split-off valence-band holes (so), in samples of undoped, bulk GaAs and GaAs/AlGaAs multiple-quantum-wells (MQW). The bulk GaAs hh-so absorption band is broad and asymmetric; its line shape is accounted for by a finite k-space width of the hole Bloch states, arising, for instance, from impurity scattering. A good fit to the data was obtained using a reasonable width of Δκ {reversed tilde equals} 0.025 A ̊-1. In the MQW structures, the intervalence band hh1-so1 PA is identified. In addition, impurity related so transitions were also observed. © 1990.

Original language	English
Pages (from-to)	291-293
Number of pages	3
Journal	Superlattices and Microstructures
Volume	7
Issue number	4
DOIs	https://doi.org/10.1016/0749-6036(90)90212-P
State	Published - Jan 1 1990
Externally published	Yes

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title = "Intervalence-band photoinduced absorption in undoped GaAs/AlxGa1-xAs multiple-quantum-wells",

abstract = "We report the results of photoinduced absorption (PA) measurements in the energy range appropriate for transitions between the heavy holes (hh) and the spin orbit split-off valence-band holes (so), in samples of undoped, bulk GaAs and GaAs/AlGaAs multiple-quantum-wells (MQW). The bulk GaAs hh-so absorption band is broad and asymmetric; its line shape is accounted for by a finite k-space width of the hole Bloch states, arising, for instance, from impurity scattering. A good fit to the data was obtained using a reasonable width of Δκ \{reversed tilde equals\} 0.025 A ̊-1. In the MQW structures, the intervalence band hh1-so1 PA is identified. In addition, impurity related so transitions were also observed. {\textcopyright} 1990.",

author = "M. Olszakier and I. Brener and E. Ehrenfreund and E. Cohen",

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T1 - Intervalence-band photoinduced absorption in undoped GaAs/AlxGa1-xAs multiple-quantum-wells

AU - Olszakier, M.

AU - Brener, I.

AU - Ehrenfreund, E.

AU - Cohen, E.

PY - 1990/1/1

Y1 - 1990/1/1

N2 - We report the results of photoinduced absorption (PA) measurements in the energy range appropriate for transitions between the heavy holes (hh) and the spin orbit split-off valence-band holes (so), in samples of undoped, bulk GaAs and GaAs/AlGaAs multiple-quantum-wells (MQW). The bulk GaAs hh-so absorption band is broad and asymmetric; its line shape is accounted for by a finite k-space width of the hole Bloch states, arising, for instance, from impurity scattering. A good fit to the data was obtained using a reasonable width of Δκ {reversed tilde equals} 0.025 A ̊-1. In the MQW structures, the intervalence band hh1-so1 PA is identified. In addition, impurity related so transitions were also observed. © 1990.

AB - We report the results of photoinduced absorption (PA) measurements in the energy range appropriate for transitions between the heavy holes (hh) and the spin orbit split-off valence-band holes (so), in samples of undoped, bulk GaAs and GaAs/AlGaAs multiple-quantum-wells (MQW). The bulk GaAs hh-so absorption band is broad and asymmetric; its line shape is accounted for by a finite k-space width of the hole Bloch states, arising, for instance, from impurity scattering. A good fit to the data was obtained using a reasonable width of Δκ {reversed tilde equals} 0.025 A ̊-1. In the MQW structures, the intervalence band hh1-so1 PA is identified. In addition, impurity related so transitions were also observed. © 1990.

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U2 - 10.1016/0749-6036(90)90212-P

DO - 10.1016/0749-6036(90)90212-P

M3 - Article

SN - 0749-6036

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JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4

ER -

Intervalence-band photoinduced absorption in undoped GaAs/Al<inf>x</inf>Ga<inf>1-x</inf>As multiple-quantum-wells

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