Isolating GaSb Membranes Grown Metamorphically on GaAs Substrates Using Highly Selective Substrate Removal Etch Processes

E. J. Renteria; A. J. Muniz; S. J. Addamane; D. M. Shima; C. P. Hains; G. Balakrishnan

doi:10.1007/s11664-015-3625-8

Isolating GaSb Membranes Grown Metamorphically on GaAs Substrates Using Highly Selective Substrate Removal Etch Processes

E. J. Renteria
, A. J. Muniz
, S. J. Addamane
, D. M. Shima
, C. P. Hains
, G. Balakrishnan

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

The etch rates of NH4OH:H2O2 and C6H8O7:H2O2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH4OH:H2O2 solution has a greater etch rate differential for the GaSb/GaAs material system than C6H8O7:H2O2 solution. The selectivity of NH4OH:H2O2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11,000 ± 2000, whereas that of C6H8O7:H2O2 has been measured up to 143 ± 2. The etch contrast has been verified by isolating 2-μm-thick GaSb epilayers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high-resolution x-ray diffraction and atomic force microscopy.

Original language	English
Pages (from-to)	1327-1331
Number of pages	5
Journal	Journal of Electronic Materials
Volume	44
Issue number	5
DOIs	https://doi.org/10.1007/s11664-015-3625-8
State	Published - Mar 24 2015
Externally published	Yes

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@article{aa708c1862224ff19a82d4f458fbacfa,

title = "Isolating GaSb Membranes Grown Metamorphically on GaAs Substrates Using Highly Selective Substrate Removal Etch Processes",

abstract = "The etch rates of NH4OH:H2O2 and C6H8O7:H2O2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH4OH:H2O2 solution has a greater etch rate differential for the GaSb/GaAs material system than C6H8O7:H2O2 solution. The selectivity of NH4OH:H2O2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11,000 ± 2000, whereas that of C6H8O7:H2O2 has been measured up to 143 ± 2. The etch contrast has been verified by isolating 2-μm-thick GaSb epilayers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high-resolution x-ray diffraction and atomic force microscopy.",

author = "Renteria, \{E. J.\} and Muniz, \{A. J.\} and Addamane, \{S. J.\} and Shima, \{D. M.\} and Hains, \{C. P.\} and G. Balakrishnan",

year = "2015",

month = mar,

day = "24",

doi = "10.1007/s11664-015-3625-8",

language = "English",

volume = "44",

pages = "1327--1331",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "5",

}

TY - JOUR

T1 - Isolating GaSb Membranes Grown Metamorphically on GaAs Substrates Using Highly Selective Substrate Removal Etch Processes

AU - Renteria, E. J.

AU - Muniz, A. J.

AU - Addamane, S. J.

AU - Shima, D. M.

AU - Hains, C. P.

AU - Balakrishnan, G.

PY - 2015/3/24

Y1 - 2015/3/24

N2 - The etch rates of NH4OH:H2O2 and C6H8O7:H2O2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH4OH:H2O2 solution has a greater etch rate differential for the GaSb/GaAs material system than C6H8O7:H2O2 solution. The selectivity of NH4OH:H2O2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11,000 ± 2000, whereas that of C6H8O7:H2O2 has been measured up to 143 ± 2. The etch contrast has been verified by isolating 2-μm-thick GaSb epilayers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high-resolution x-ray diffraction and atomic force microscopy.

AB - The etch rates of NH4OH:H2O2 and C6H8O7:H2O2 for GaAs and GaSb have been investigated to develop a selective etch for GaAs substrates and to isolate GaSb epilayers grown on GaAs. The NH4OH:H2O2 solution has a greater etch rate differential for the GaSb/GaAs material system than C6H8O7:H2O2 solution. The selectivity of NH4OH:H2O2 for GaAs/GaSb under optimized etch conditions has been observed to be as high as 11,000 ± 2000, whereas that of C6H8O7:H2O2 has been measured up to 143 ± 2. The etch contrast has been verified by isolating 2-μm-thick GaSb epilayers that were grown on GaAs substrates. GaSb membranes were tested and characterized with high-resolution x-ray diffraction and atomic force microscopy.

UR - https://www.scopus.com/pages/publications/84921870283

U2 - 10.1007/s11664-015-3625-8

DO - 10.1007/s11664-015-3625-8

M3 - Article

SN - 0361-5235

VL - 44

SP - 1327

EP - 1331

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 5

ER -

Isolating GaSb Membranes Grown Metamorphically on GaAs Substrates Using Highly Selective Substrate Removal Etch Processes

Abstract

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