Isolation and characterization of large-area GaSb membranes grown on GaAs substrates

Emma J. Renteria; Pankaj Ahirwar; Stephen P.R. Clark; Orlando S. Romero; Sadhvikas Addamane; Chris P. Hains; Tom J. Rotter; Larry R. Dawson; Olga Lavrova; Luke F. Lester; Ganesh Balakrishnan

doi:10.1109/PVSC.2013.6744973

Isolation and characterization of large-area GaSb membranes grown on GaAs substrates

Emma J. Renteria
, Pankaj Ahirwar
, Stephen P.R. Clark
, Orlando S. Romero
, Sadhvikas Addamane
, Chris P. Hains
, Tom J. Rotter
, Larry R. Dawson
, Olga Lavrova
, Luke F. Lester
, Ganesh Balakrishnan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

We investigate substrate removal techniques for GaSb epilayers grown on GaAs substrates. The GaSb epilayers are grown metamorphically on the GaAs substrate by inducing large areas of 90°interfacial misfit dislocation arrays at the GaSb/GaAs interface. Three structures have been investigated, each with a different etch stop process such that the GaAs substrate is removed without affecting the GaSb epi-layer. The GaSb membranes upon isolation are characterized for crystal quality using x-ray diffraction and for surface quality using atomic force microscopy. © 2013 IEEE.

Original language	English
Title of host publication	Conference Record of the IEEE Photovoltaic Specialists Conference
Pages	2459-2461
Number of pages	3
DOIs	https://doi.org/10.1109/PVSC.2013.6744973
State	Published - Jan 1 2013
Externally published	Yes

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10.1109/PVSC.2013.6744973

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Renteria, E. J., Ahirwar, P., Clark, S. P. R., Romero, O. S., Addamane, S., Hains, C. P., Rotter, T. J., Dawson, L. R., Lavrova, O., Lester, L. F., & Balakrishnan, G. (2013). Isolation and characterization of large-area GaSb membranes grown on GaAs substrates. In Conference Record of the IEEE Photovoltaic Specialists Conference (pp. 2459-2461) https://doi.org/10.1109/PVSC.2013.6744973

@inproceedings{d9547e8b3baa4a909ed4c3de0e367014,

title = "Isolation and characterization of large-area GaSb membranes grown on GaAs substrates",

abstract = "We investigate substrate removal techniques for GaSb epilayers grown on GaAs substrates. The GaSb epilayers are grown metamorphically on the GaAs substrate by inducing large areas of 90°interfacial misfit dislocation arrays at the GaSb/GaAs interface. Three structures have been investigated, each with a different etch stop process such that the GaAs substrate is removed without affecting the GaSb epi-layer. The GaSb membranes upon isolation are characterized for crystal quality using x-ray diffraction and for surface quality using atomic force microscopy. {\textcopyright} 2013 IEEE.",

author = "Renteria, \{Emma J.\} and Pankaj Ahirwar and Clark, \{Stephen P.R.\} and Romero, \{Orlando S.\} and Sadhvikas Addamane and Hains, \{Chris P.\} and Rotter, \{Tom J.\} and Dawson, \{Larry R.\} and Olga Lavrova and Lester, \{Luke F.\} and Ganesh Balakrishnan",

year = "2013",

month = jan,

day = "1",

doi = "10.1109/PVSC.2013.6744973",

language = "English",

isbn = "9781479932993",

pages = "2459--2461",

booktitle = "Conference Record of the IEEE Photovoltaic Specialists Conference",

}

TY - GEN

T1 - Isolation and characterization of large-area GaSb membranes grown on GaAs substrates

AU - Renteria, Emma J.

AU - Ahirwar, Pankaj

AU - Clark, Stephen P.R.

AU - Romero, Orlando S.

AU - Addamane, Sadhvikas

AU - Hains, Chris P.

AU - Rotter, Tom J.

AU - Dawson, Larry R.

AU - Lavrova, Olga

AU - Lester, Luke F.

AU - Balakrishnan, Ganesh

PY - 2013/1/1

Y1 - 2013/1/1

N2 - We investigate substrate removal techniques for GaSb epilayers grown on GaAs substrates. The GaSb epilayers are grown metamorphically on the GaAs substrate by inducing large areas of 90°interfacial misfit dislocation arrays at the GaSb/GaAs interface. Three structures have been investigated, each with a different etch stop process such that the GaAs substrate is removed without affecting the GaSb epi-layer. The GaSb membranes upon isolation are characterized for crystal quality using x-ray diffraction and for surface quality using atomic force microscopy. © 2013 IEEE.

AB - We investigate substrate removal techniques for GaSb epilayers grown on GaAs substrates. The GaSb epilayers are grown metamorphically on the GaAs substrate by inducing large areas of 90°interfacial misfit dislocation arrays at the GaSb/GaAs interface. Three structures have been investigated, each with a different etch stop process such that the GaAs substrate is removed without affecting the GaSb epi-layer. The GaSb membranes upon isolation are characterized for crystal quality using x-ray diffraction and for surface quality using atomic force microscopy. © 2013 IEEE.

UR - https://www.scopus.com/pages/publications/84896455499

U2 - 10.1109/PVSC.2013.6744973

DO - 10.1109/PVSC.2013.6744973

M3 - Conference contribution

SN - 9781479932993

SP - 2459

EP - 2461

BT - Conference Record of the IEEE Photovoltaic Specialists Conference

ER -

Isolation and characterization of large-area GaSb membranes grown on GaAs substrates

Abstract

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