Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)

Y. W. Mo; D. E. Savage; B. S. Swartzentruber; M. G. Lagally

doi:10.1103/PhysRevLett.65.1020

Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)

Y. W. Mo
, D. E. Savage
, B. S. Swartzentruber
, M. G. Lagally

Research output: Contribution to journal › Article › peer-review

1454 Scopus citations

Abstract

The transition from 2D to 3D growth of Ge on Si(001) has been investigated with scanning tunneling microscopy. A metastable 3D cluster phase with well-defined structure and shape is found. The clusters have a {105} facet structure. Results suggest that these clusters define the kinetic path for formation of macroscopic Ge islands. © 1990 The American Physical Society.

Original language	English
Pages (from-to)	1020-1023
Number of pages	4
Journal	Physical Review Letters
Volume	65
Issue number	8
DOIs	https://doi.org/10.1103/PhysRevLett.65.1020
State	Published - Jan 1 1990
Externally published	Yes

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@article{c3f2936bef1945768b1a303568136a38,

title = "Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)",

abstract = "The transition from 2D to 3D growth of Ge on Si(001) has been investigated with scanning tunneling microscopy. A metastable 3D cluster phase with well-defined structure and shape is found. The clusters have a \{105\} facet structure. Results suggest that these clusters define the kinetic path for formation of macroscopic Ge islands. {\textcopyright} 1990 The American Physical Society.",

author = "Mo, \{Y. W.\} and Savage, \{D. E.\} and Swartzentruber, \{B. S.\} and Lagally, \{M. G.\}",

year = "1990",

month = jan,

day = "1",

doi = "10.1103/PhysRevLett.65.1020",

language = "English",

volume = "65",

pages = "1020--1023",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "8",

}

TY - JOUR

T1 - Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)

AU - Mo, Y. W.

AU - Savage, D. E.

AU - Swartzentruber, B. S.

AU - Lagally, M. G.

PY - 1990/1/1

Y1 - 1990/1/1

N2 - The transition from 2D to 3D growth of Ge on Si(001) has been investigated with scanning tunneling microscopy. A metastable 3D cluster phase with well-defined structure and shape is found. The clusters have a {105} facet structure. Results suggest that these clusters define the kinetic path for formation of macroscopic Ge islands. © 1990 The American Physical Society.

AB - The transition from 2D to 3D growth of Ge on Si(001) has been investigated with scanning tunneling microscopy. A metastable 3D cluster phase with well-defined structure and shape is found. The clusters have a {105} facet structure. Results suggest that these clusters define the kinetic path for formation of macroscopic Ge islands. © 1990 The American Physical Society.

UR - https://www.scopus.com/pages/publications/3643143147

U2 - 10.1103/PhysRevLett.65.1020

DO - 10.1103/PhysRevLett.65.1020

M3 - Article

SN - 0031-9007

VL - 65

SP - 1020

EP - 1023

JO - Physical Review Letters

JF - Physical Review Letters

IS - 8

ER -

Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)

Abstract

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