Large Acoustoelectric Effect in Wafer Bonded Indium Gallium Arsenide / Lithium Niobate Heterostructure Augmented by Novel Gate Control

Aleem M. Siddiqui; Lisa P. Hackett; Daniel Dominguez; Anna Tauke-Pedretti; Tom Friedmann; Gregory Peake; Michael R. Miller; James K. Douglas; Matt Eichenfield

doi:10.1109/TRANSDUCERS.2019.8808281

Large Acoustoelectric Effect in Wafer Bonded Indium Gallium Arsenide / Lithium Niobate Heterostructure Augmented by Novel Gate Control

Aleem M. Siddiqui
, Lisa P. Hackett
, Daniel Dominguez
, Anna Tauke-Pedretti
, Tom Friedmann
, Gregory Peake
, Michael R. Miller
, James K. Douglas
, Matt Eichenfield

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Scopus citations

Abstract

This paper demonstrates a monolithic surface acoustic wave amplifier fabricated by state-of-the-art heterogenous integration of a IH-V InGaAs-based epitaxial material stack and LiNb03. Due to the superior properties of the materials employed, we observe electron gain and also non-reciprocal gain in excess of 30dB with reduced power consumption. Additionally, we present a framework for performance optimization as a function of material parameters for a targeted gain. This platform enables further advances in active and non-reciprocal piezoelectric acoustic devices.

Original language	English
Title of host publication	2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII
Pages	61-64
Number of pages	4
DOIs	https://doi.org/10.1109/TRANSDUCERS.2019.8808281
State	Published - Jun 1 2019
Externally published	Yes

Access to Document

10.1109/TRANSDUCERS.2019.8808281

Cite this

Siddiqui, A. M., Hackett, L. P., Dominguez, D., Tauke-Pedretti, A., Friedmann, T., Peake, G., Miller, M. R., Douglas, J. K., & Eichenfield, M. (2019). Large Acoustoelectric Effect in Wafer Bonded Indium Gallium Arsenide / Lithium Niobate Heterostructure Augmented by Novel Gate Control. In 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII (pp. 61-64) https://doi.org/10.1109/TRANSDUCERS.2019.8808281

@inproceedings{74fbf99d764b4049af51b4b20ad6bbec,

title = "Large Acoustoelectric Effect in Wafer Bonded Indium Gallium Arsenide / Lithium Niobate Heterostructure Augmented by Novel Gate Control",

abstract = "This paper demonstrates a monolithic surface acoustic wave amplifier fabricated by state-of-the-art heterogenous integration of a IH-V InGaAs-based epitaxial material stack and LiNb03. Due to the superior properties of the materials employed, we observe electron gain and also non-reciprocal gain in excess of 30dB with reduced power consumption. Additionally, we present a framework for performance optimization as a function of material parameters for a targeted gain. This platform enables further advances in active and non-reciprocal piezoelectric acoustic devices.",

author = "Siddiqui, \{Aleem M.\} and Hackett, \{Lisa P.\} and Daniel Dominguez and Anna Tauke-Pedretti and Tom Friedmann and Gregory Peake and Miller, \{Michael R.\} and Douglas, \{James K.\} and Matt Eichenfield",

year = "2019",

month = jun,

day = "1",

doi = "10.1109/TRANSDUCERS.2019.8808281",

language = "English",

isbn = "9781728120072",

pages = "61--64",

booktitle = "2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII",

}

Siddiqui, AM, Hackett, LP, Dominguez, D, Tauke-Pedretti, A, Friedmann, T, Peake, G, Miller, MR, Douglas, JK & Eichenfield, M 2019, Large Acoustoelectric Effect in Wafer Bonded Indium Gallium Arsenide / Lithium Niobate Heterostructure Augmented by Novel Gate Control. in 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII. pp. 61-64. https://doi.org/10.1109/TRANSDUCERS.2019.8808281

Large Acoustoelectric Effect in Wafer Bonded Indium Gallium Arsenide / Lithium Niobate Heterostructure Augmented by Novel Gate Control. / Siddiqui, Aleem M.; Hackett, Lisa P.; Dominguez, Daniel et al.
2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII. 2019. p. 61-64.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Large Acoustoelectric Effect in Wafer Bonded Indium Gallium Arsenide / Lithium Niobate Heterostructure Augmented by Novel Gate Control

AU - Siddiqui, Aleem M.

AU - Hackett, Lisa P.

AU - Dominguez, Daniel

AU - Tauke-Pedretti, Anna

AU - Friedmann, Tom

AU - Peake, Gregory

AU - Miller, Michael R.

AU - Douglas, James K.

AU - Eichenfield, Matt

PY - 2019/6/1

Y1 - 2019/6/1

N2 - This paper demonstrates a monolithic surface acoustic wave amplifier fabricated by state-of-the-art heterogenous integration of a IH-V InGaAs-based epitaxial material stack and LiNb03. Due to the superior properties of the materials employed, we observe electron gain and also non-reciprocal gain in excess of 30dB with reduced power consumption. Additionally, we present a framework for performance optimization as a function of material parameters for a targeted gain. This platform enables further advances in active and non-reciprocal piezoelectric acoustic devices.

AB - This paper demonstrates a monolithic surface acoustic wave amplifier fabricated by state-of-the-art heterogenous integration of a IH-V InGaAs-based epitaxial material stack and LiNb03. Due to the superior properties of the materials employed, we observe electron gain and also non-reciprocal gain in excess of 30dB with reduced power consumption. Additionally, we present a framework for performance optimization as a function of material parameters for a targeted gain. This platform enables further advances in active and non-reciprocal piezoelectric acoustic devices.

UR - https://www.scopus.com/pages/publications/85071947751

U2 - 10.1109/TRANSDUCERS.2019.8808281

DO - 10.1109/TRANSDUCERS.2019.8808281

M3 - Conference contribution

SN - 9781728120072

SP - 61

EP - 64

BT - 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII

ER -

Siddiqui AM, Hackett LP, Dominguez D, Tauke-Pedretti A, Friedmann T, Peake G et al. Large Acoustoelectric Effect in Wafer Bonded Indium Gallium Arsenide / Lithium Niobate Heterostructure Augmented by Novel Gate Control. In 2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems and Eurosensors XXXIII, TRANSDUCERS 2019 and EUROSENSORS XXXIII. 2019. p. 61-64 doi: 10.1109/TRANSDUCERS.2019.8808281

Large Acoustoelectric Effect in Wafer Bonded Indium Gallium Arsenide / Lithium Niobate Heterostructure Augmented by Novel Gate Control

Abstract

Access to Document

Fingerprint

Cite this