Laser gain properties of AlGaN quantum wells

W. W. Chow; M. Kneissl

doi:10.1063/1.2128495

Laser gain properties of AlGaN quantum wells

W. W. Chow
, M. Kneissl

Research output: Contribution to journal › Article › peer-review

71 Scopus citations

Abstract

Laser gain is investigated for AlGaN wurtzite quantum-well structures emitting in the wavelength range from ∼270 to 340 nm. The calculations show that gain properties vary notably with aluminum concentration in the quantum well. The TE gain dominates over the entire spectral range, although an enhancement of TM gain is observed for AlGaN quantum wells with the high aluminum mole fraction. The calculations also predict an increase in threshold current density for the shorter-wavelength lasers. © 2005 American Institute of Physics.

Original language	English
Journal	Journal of Applied Physics
Volume	98
Issue number	11
DOIs	https://doi.org/10.1063/1.2128495
State	Published - Dec 27 2005
Externally published	Yes

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@article{9cd5c2dfc00e4ac99de27b5e8b43cdbb,

title = "Laser gain properties of AlGaN quantum wells",

abstract = "Laser gain is investigated for AlGaN wurtzite quantum-well structures emitting in the wavelength range from ∼270 to 340 nm. The calculations show that gain properties vary notably with aluminum concentration in the quantum well. The TE gain dominates over the entire spectral range, although an enhancement of TM gain is observed for AlGaN quantum wells with the high aluminum mole fraction. The calculations also predict an increase in threshold current density for the shorter-wavelength lasers. {\textcopyright} 2005 American Institute of Physics.",

author = "Chow, \{W. W.\} and M. Kneissl",

year = "2005",

month = dec,

day = "27",

doi = "10.1063/1.2128495",

language = "English",

volume = "98",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Laser gain properties of AlGaN quantum wells

AU - Chow, W. W.

AU - Kneissl, M.

PY - 2005/12/27

Y1 - 2005/12/27

N2 - Laser gain is investigated for AlGaN wurtzite quantum-well structures emitting in the wavelength range from ∼270 to 340 nm. The calculations show that gain properties vary notably with aluminum concentration in the quantum well. The TE gain dominates over the entire spectral range, although an enhancement of TM gain is observed for AlGaN quantum wells with the high aluminum mole fraction. The calculations also predict an increase in threshold current density for the shorter-wavelength lasers. © 2005 American Institute of Physics.

AB - Laser gain is investigated for AlGaN wurtzite quantum-well structures emitting in the wavelength range from ∼270 to 340 nm. The calculations show that gain properties vary notably with aluminum concentration in the quantum well. The TE gain dominates over the entire spectral range, although an enhancement of TM gain is observed for AlGaN quantum wells with the high aluminum mole fraction. The calculations also predict an increase in threshold current density for the shorter-wavelength lasers. © 2005 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/29144473028

U2 - 10.1063/1.2128495

DO - 10.1063/1.2128495

M3 - Article

SN - 0021-8979

VL - 98

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Laser gain properties of AlGaN quantum wells

Abstract

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