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Laser instabilities and the influence of the nonlinear semiconductor gain medium

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A comprehensive microscopic theory is reviewed which allows to compute gain and refractive index properties of semiconductor heterostructures with varying degree of strain and quantum confinement. The theory is applied to model unstable resonator semiconductor laser. It is shown that the specific properties of the gain medium strongly influence the lateral mode stability.
Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Pages2-10
Number of pages9
Volume2039
DOIs
StatePublished - Dec 1 1993
Externally publishedYes

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