Abstract
A comprehensive microscopic theory is reviewed which allows to compute gain and refractive index properties of semiconductor heterostructures with varying degree of strain and quantum confinement. The theory is applied to model unstable resonator semiconductor laser. It is shown that the specific properties of the gain medium strongly influence the lateral mode stability.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Pages | 2-10 |
| Number of pages | 9 |
| Volume | 2039 |
| DOIs | |
| State | Published - Dec 1 1993 |
| Externally published | Yes |
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