Linewidth enhancement factor in 1.3 μm GaAsSb type-II quantum-well lasers

C. Schlichenmaier; S. W. Koch; W. W. Chow

doi:10.1063/1.1514392

Linewidth enhancement factor in 1.3 μm GaAsSb type-II quantum-well lasers

C. Schlichenmaier
, S. W. Koch
, W. W. Chow

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The antiguiding or linewidth enhancement factor α is computed microscopically for a series of type-II GaAsSb/GaInAs/GaAs quantum-well structures. The results predict α values below unity at peak gain suggesting highly stable laser operation with excellent linewidth properties. © 2002 American Institute of Physics.

Original language	English
Pages (from-to)	2944-2946
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	16
DOIs	https://doi.org/10.1063/1.1514392
State	Published - Oct 14 2002
Externally published	Yes

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title = "Linewidth enhancement factor in 1.3 μm GaAsSb type-II quantum-well lasers",

abstract = "The antiguiding or linewidth enhancement factor α is computed microscopically for a series of type-II GaAsSb/GaInAs/GaAs quantum-well structures. The results predict α values below unity at peak gain suggesting highly stable laser operation with excellent linewidth properties. {\textcopyright} 2002 American Institute of Physics.",

author = "C. Schlichenmaier and Koch, \{S. W.\} and Chow, \{W. W.\}",

year = "2002",

month = oct,

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doi = "10.1063/1.1514392",

language = "English",

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journal = "Applied Physics Letters",

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T1 - Linewidth enhancement factor in 1.3 μm GaAsSb type-II quantum-well lasers

AU - Schlichenmaier, C.

AU - Koch, S. W.

AU - Chow, W. W.

PY - 2002/10/14

Y1 - 2002/10/14

N2 - The antiguiding or linewidth enhancement factor α is computed microscopically for a series of type-II GaAsSb/GaInAs/GaAs quantum-well structures. The results predict α values below unity at peak gain suggesting highly stable laser operation with excellent linewidth properties. © 2002 American Institute of Physics.

AB - The antiguiding or linewidth enhancement factor α is computed microscopically for a series of type-II GaAsSb/GaInAs/GaAs quantum-well structures. The results predict α values below unity at peak gain suggesting highly stable laser operation with excellent linewidth properties. © 2002 American Institute of Physics.

UR - https://www.scopus.com/pages/publications/79956022928

U2 - 10.1063/1.1514392

DO - 10.1063/1.1514392

M3 - Article

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VL - 81

SP - 2944

EP - 2946

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 16

ER -

Linewidth enhancement factor in 1.3 μm GaAsSb type-II quantum-well lasers

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