Local doping of graphene devices by selective hydrogen adsorption

Min Park; Yong Ju Yun; Minwoo Lee; Dae Hong Jeong; Yongseok Jun; Yung Woo Park; Byung Hoon Kim

doi:10.1063/1.4906254

Local doping of graphene devices by selective hydrogen adsorption

Min Park
, Yong Ju Yun
, Minwoo Lee
, Dae Hong Jeong
, Yongseok Jun
, Yung Woo Park
, Byung Hoon Kim

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

N-type graphene fabricated by exposure to hydrogen gas has been previously studied. Based on this property of graphene, herein, we demonstrate local doping in single-layer graphene using selective adsorption of dissociative hydrogen at 350 K. A graphene field effect transistor was produced covered with PMMA on half of the graphene region. The charge neutrality point of the PMMA-window region shifted to a negative gate voltage (V_G) region prominently compared with that of the PMMA-covered region. Consequently, a single graphene p-n junction was obtained by measuring the V_G-dependent resistance of the whole graphene region. This method presents opportunities for developing and controlling the electronic structure of graphene and device applications.

Original language	English
Article number	017120
Journal	AIP Advances
Volume	5
Issue number	1
DOIs	https://doi.org/10.1063/1.4906254
State	Published - Jan 1 2015
Externally published	Yes

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10.1063/1.4906254

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title = "Local doping of graphene devices by selective hydrogen adsorption",

abstract = "N-type graphene fabricated by exposure to hydrogen gas has been previously studied. Based on this property of graphene, herein, we demonstrate local doping in single-layer graphene using selective adsorption of dissociative hydrogen at 350 K. A graphene field effect transistor was produced covered with PMMA on half of the graphene region. The charge neutrality point of the PMMA-window region shifted to a negative gate voltage (VG) region prominently compared with that of the PMMA-covered region. Consequently, a single graphene p-n junction was obtained by measuring the VG-dependent resistance of the whole graphene region. This method presents opportunities for developing and controlling the electronic structure of graphene and device applications.",

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AU - Park, Min

AU - Yun, Yong Ju

AU - Lee, Minwoo

AU - Jeong, Dae Hong

AU - Jun, Yongseok

AU - Park, Yung Woo

AU - Kim, Byung Hoon

PY - 2015/1/1

Y1 - 2015/1/1

N2 - N-type graphene fabricated by exposure to hydrogen gas has been previously studied. Based on this property of graphene, herein, we demonstrate local doping in single-layer graphene using selective adsorption of dissociative hydrogen at 350 K. A graphene field effect transistor was produced covered with PMMA on half of the graphene region. The charge neutrality point of the PMMA-window region shifted to a negative gate voltage (VG) region prominently compared with that of the PMMA-covered region. Consequently, a single graphene p-n junction was obtained by measuring the VG-dependent resistance of the whole graphene region. This method presents opportunities for developing and controlling the electronic structure of graphene and device applications.

AB - N-type graphene fabricated by exposure to hydrogen gas has been previously studied. Based on this property of graphene, herein, we demonstrate local doping in single-layer graphene using selective adsorption of dissociative hydrogen at 350 K. A graphene field effect transistor was produced covered with PMMA on half of the graphene region. The charge neutrality point of the PMMA-window region shifted to a negative gate voltage (VG) region prominently compared with that of the PMMA-covered region. Consequently, a single graphene p-n junction was obtained by measuring the VG-dependent resistance of the whole graphene region. This method presents opportunities for developing and controlling the electronic structure of graphene and device applications.

UR - https://www.scopus.com/pages/publications/84923794681

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JO - AIP Advances

JF - AIP Advances

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ER -

Local doping of graphene devices by selective hydrogen adsorption

Abstract

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