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Local structure around Ga in ultrafine GaN/ZnO coaxial nanorod heterostructures

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Abstract

The structure of tubular GaN coaxially grown on ZnO nanorods with thickness of 6-12 nm was investigated using x-ray absorption fine structure (XAFS) at the Ga K edge. The XAFS measurements revealed that the GaN had a distorted-wurtzite structure, and that there were more distortions in the bond length of Ga-Ga pairs than in Ga-N pairs. However, no extra disorders were observed in any of the pairs. These results strongly suggest that Ga atoms first bonded to the ZnO template. Unlike other techniques, the XAFS determines structure around a selected species atom in nano-heterostructures.

Original languageEnglish
Article number111910
JournalApplied Physics Letters
Volume88
Issue number11
DOIs
StatePublished - Mar 30 2006
Externally publishedYes

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