Local structure surrounding implanted As+ ions in polysulfone films

R. A. Mayanovic; Y. Feng; K. W. Groh; Yongqiang Wang; R. E. Giedd; M. G. Moss

Local structure surrounding implanted As⁺ ions in polysulfone films

R. A. Mayanovic
, Y. Feng
, K. W. Groh
, Yongqiang Wang
, R. E. Giedd
, M. G. Moss

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Results from As K-edge XAFS studies on polysulfone films implanted with 50 KeV As⁺ in the dose range of 10¹⁵ to 10¹⁶ ions/cm² indicate that As reacts chemically with O atoms to form As-(3)O based molecular structures having As-O bond lengths equal to 1.81±0.02 angstrom. In comparison to samples implanted in the dose range 10¹⁵ to 10¹⁶ ions/cm², the molecular environment surrounding As in polysulfone implanted at 10¹⁷ ions/cm² has additional structure beyond the nearest-neighbor O atoms.

Original language	English
Title of host publication	Crystallization and Related Phenomena in Amorphous Materials
Editors	Matthew Libera, Tony E. Haynes, Peggy Cebe, James E. Dickinson Jr.
Publisher	Unknown Publisher
Pages	113-116
Number of pages	4
ISBN (Print)	1558992200
State	Published - Jan 1 1994
Externally published	Yes
Event	Proceedings of the 1993 Fall Meeting of the Materials Research Society - Duration: Jan 1 1994 → …

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	321
ISSN (Print)	0272-9172

Conference

Conference	Proceedings of the 1993 Fall Meeting of the Materials Research Society
Period	01/1/94 → …

Cite this

Mayanovic, R. A., Feng, Y., Groh, K. W., Wang, Y., Giedd, R. E., & Moss, M. G. (1994). Local structure surrounding implanted As⁺ ions in polysulfone films. In M. Libera, T. E. Haynes, P. Cebe, & J. E. Dickinson Jr. (Eds.), Crystallization and Related Phenomena in Amorphous Materials (pp. 113-116). (Materials Research Society Symposium Proceedings; Vol. 321). Unknown Publisher.

@inproceedings{64baede534da4ad69cd7da4ea33d6fe2,

title = "Local structure surrounding implanted As+ ions in polysulfone films",

abstract = "Results from As K-edge XAFS studies on polysulfone films implanted with 50 KeV As+ in the dose range of 1015 to 1016 ions/cm2 indicate that As reacts chemically with O atoms to form As-(3)O based molecular structures having As-O bond lengths equal to 1.81±0.02 angstrom. In comparison to samples implanted in the dose range 1015 to 1016 ions/cm2, the molecular environment surrounding As in polysulfone implanted at 1017 ions/cm2 has additional structure beyond the nearest-neighbor O atoms.",

author = "Mayanovic, \{R. A.\} and Y. Feng and Groh, \{K. W.\} and Yongqiang Wang and Giedd, \{R. E.\} and Moss, \{M. G.\}",

year = "1994",

month = jan,

day = "1",

language = "English",

isbn = "1558992200",

series = "Materials Research Society Symposium Proceedings",

publisher = "Unknown Publisher",

pages = "113--116",

editor = "Matthew Libera and Haynes, \{Tony E.\} and Peggy Cebe and \{Dickinson Jr.\}, \{James E.\}",

booktitle = "Crystallization and Related Phenomena in Amorphous Materials",

note = "Proceedings of the 1993 Fall Meeting of the Materials Research Society ; Conference date: 01-01-1994",

}

Mayanovic, RA, Feng, Y, Groh, KW, Wang, Y, Giedd, RE & Moss, MG 1994, Local structure surrounding implanted As⁺ ions in polysulfone films. in M Libera, TE Haynes, P Cebe & JE Dickinson Jr. (eds), Crystallization and Related Phenomena in Amorphous Materials. Materials Research Society Symposium Proceedings, vol. 321, Unknown Publisher, pp. 113-116, Proceedings of the 1993 Fall Meeting of the Materials Research Society, 01/1/94.

Local structure surrounding implanted As⁺ ions in polysulfone films. / Mayanovic, R. A.; Feng, Y.; Groh, K. W. et al.
Crystallization and Related Phenomena in Amorphous Materials. ed. / Matthew Libera; Tony E. Haynes; Peggy Cebe; James E. Dickinson Jr. Unknown Publisher, 1994. p. 113-116 (Materials Research Society Symposium Proceedings; Vol. 321).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Local structure surrounding implanted As+ ions in polysulfone films

AU - Mayanovic, R. A.

AU - Feng, Y.

AU - Groh, K. W.

AU - Wang, Yongqiang

AU - Giedd, R. E.

AU - Moss, M. G.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - Results from As K-edge XAFS studies on polysulfone films implanted with 50 KeV As+ in the dose range of 1015 to 1016 ions/cm2 indicate that As reacts chemically with O atoms to form As-(3)O based molecular structures having As-O bond lengths equal to 1.81±0.02 angstrom. In comparison to samples implanted in the dose range 1015 to 1016 ions/cm2, the molecular environment surrounding As in polysulfone implanted at 1017 ions/cm2 has additional structure beyond the nearest-neighbor O atoms.

AB - Results from As K-edge XAFS studies on polysulfone films implanted with 50 KeV As+ in the dose range of 1015 to 1016 ions/cm2 indicate that As reacts chemically with O atoms to form As-(3)O based molecular structures having As-O bond lengths equal to 1.81±0.02 angstrom. In comparison to samples implanted in the dose range 1015 to 1016 ions/cm2, the molecular environment surrounding As in polysulfone implanted at 1017 ions/cm2 has additional structure beyond the nearest-neighbor O atoms.

UR - https://www.scopus.com/pages/publications/0028342025

M3 - Conference contribution

SN - 1558992200

T3 - Materials Research Society Symposium Proceedings

SP - 113

EP - 116

BT - Crystallization and Related Phenomena in Amorphous Materials

A2 - Libera, Matthew

A2 - Haynes, Tony E.

A2 - Cebe, Peggy

A2 - Dickinson Jr., James E.

PB - Unknown Publisher

T2 - Proceedings of the 1993 Fall Meeting of the Materials Research Society

Y2 - 1 January 1994