Abstract
We performed 1-2 keV focused Au implants into Si, in which the depth was validated by atom-probe tomography. We show that identical results are achievable by either lowering the column voltage, or decelerating ions using bias - while maintaining nanoscale spatial resolution. Furthermore, our data reveal that standard implant modeling overestimates experimental depth by 4.7x and 3.8x at 1 and 2 keV respectively. Finally, we demonstrate how our results pave a way to eV-scale implantation energies, while maintaining high spatial resolution.
| Original language | English |
|---|---|
| Title of host publication | International Conference on Metamaterials, Photonic Crystals and Plasmonics |
| Pages | 1229-1230 |
| Number of pages | 2 |
| State | Published - Jan 1 2023 |
| Externally published | Yes |
Fingerprint
Dive into the research topics of 'Low Energy Focused Ion Beam Implantation'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver