Low-Frequency Noise and Deep Level Transient Spectroscopy in n-p-n Si Bipolar Junction Transistors Irradiated with Si Ions

The properties of defects in <italic>n-p-n</italic> Si bipolar junction transistors (BJTs) caused by 17 MeV Si ions are investigated via current-voltage, low-frequency noise, and deep-level transient spectroscopy (DLTS) measurements. Four prominent radiation-induced defects in the base-collector junction of these transistors are identified via DLTS. At least two defect levels are observed in temperature-dependent low-frequency 1/<italic>f</italic> noise measurements, one that is similar to a prominent defect in DLTS and another that is not. Defect microstructures are discussed. Our results show that DLTS and 1/<italic>f</italic> noise measurements can provide complementary information about defects in linear bipolar devices.