Low-temperature silicon epitaxy for atomic precision devices

Evan M. Anderson; Aaron M. Katzenmeyer; Ting S. Luk; Deanna M. Campbell; Michael T. Marshall; Ezra Bussmann; James A. Ohlhausen; Ping Lu; Paul Kotula; Daniel R. Ward; Tzu Ming Lu; Shashank Misra

doi:10.1149/09301.0037ecst

Low-temperature silicon epitaxy for atomic precision devices

Evan M. Anderson
, Aaron M. Katzenmeyer
, Ting S. Luk
, Deanna M. Campbell
, Michael T. Marshall
, Ezra Bussmann
, James A. Ohlhausen
, Ping Lu
, Paul Kotula
, Daniel R. Ward
, Tzu Ming Lu
, Shashank Misra

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

We discuss chemical, structural, and ellipsometry characterization of low temperature epitaxial Si. While low temperature growth is not ideal, we are still able to prepare crystalline Si to cap functional atomic precision devices.

Original language	English
Title of host publication	ECS Transactions
Pages	37-40
Number of pages	4
Volume	93
Edition	1
DOIs	https://doi.org/10.1149/09301.0037ecst
State	Published - Jan 1 2019
Externally published	Yes

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title = "Low-temperature silicon epitaxy for atomic precision devices",

abstract = "We discuss chemical, structural, and ellipsometry characterization of low temperature epitaxial Si. While low temperature growth is not ideal, we are still able to prepare crystalline Si to cap functional atomic precision devices.",

author = "Anderson, \{Evan M.\} and Katzenmeyer, \{Aaron M.\} and Luk, \{Ting S.\} and Campbell, \{Deanna M.\} and Marshall, \{Michael T.\} and Ezra Bussmann and Ohlhausen, \{James A.\} and Ping Lu and Paul Kotula and Ward, \{Daniel R.\} and Lu, \{Tzu Ming\} and Shashank Misra",

year = "2019",

month = jan,

day = "1",

doi = "10.1149/09301.0037ecst",

language = "English",

isbn = "9781607688853",

volume = "93",

pages = "37--40",

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edition = "1",

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TY - GEN

T1 - Low-temperature silicon epitaxy for atomic precision devices

AU - Anderson, Evan M.

AU - Katzenmeyer, Aaron M.

AU - Luk, Ting S.

AU - Campbell, Deanna M.

AU - Marshall, Michael T.

AU - Bussmann, Ezra

AU - Ohlhausen, James A.

AU - Lu, Ping

AU - Kotula, Paul

AU - Ward, Daniel R.

AU - Lu, Tzu Ming

AU - Misra, Shashank

PY - 2019/1/1

Y1 - 2019/1/1

N2 - We discuss chemical, structural, and ellipsometry characterization of low temperature epitaxial Si. While low temperature growth is not ideal, we are still able to prepare crystalline Si to cap functional atomic precision devices.

AB - We discuss chemical, structural, and ellipsometry characterization of low temperature epitaxial Si. While low temperature growth is not ideal, we are still able to prepare crystalline Si to cap functional atomic precision devices.

UR - https://www.scopus.com/pages/publications/85079771912

U2 - 10.1149/09301.0037ecst

DO - 10.1149/09301.0037ecst

M3 - Conference contribution

SN - 9781607688853

VL - 93

SP - 37

EP - 40

BT - ECS Transactions

ER -

Low-temperature silicon epitaxy for atomic precision devices

Abstract

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