Manipulating leakage behavior via distribution of interfaces in oxide thin films

Vertical interfaces have been approved to be able to effectively manipulate conduction behavior in oxide thin films. However, a systematic investigation is needed to understand the physical process underlying the interface effects. Here, epitaxial (BiFeO₃)_0.5:(Sm₂O ₃)_0.5 thin films have been fabricated and used as a model system. The microstructure and leakage behavior of (BiFeO₃) _0.5:(Sm₂O₃)_0.5 composite films on (001) and (011) SrTiO₃ substrates have been investigated. The different substrate orientation originated to different geometrical configurations of interfaces in the composite films. The leakage current has been significantly reduced when the complicated distribution of interfaces leads to a longer distance of conduction path. The present work represented an approach to reduce the leakage current and to further understand the way that how the interface contributes to the conduction behavior in oxide thin films.