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Manipulation of electrical properties in CVD-grown twisted bilayer graphene induced by dissociative hydrogen adsorption

  • Sung Ju Hong
  • , Min Park
  • , Hojin Kang
  • , Minwoo Lee
  • , David Soler-Delgado
  • , Dae Hong Jeong
  • , Yung Woo Park
  • , Byung Hoon Kim

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We report hydrogen adsorption on twisted bilayer graphene (tBLG). Raman spectroscopy and the electrical transport properties (electrical resistance and thermoelectric power) confirm the electron doping by hydrogen adsorption, in agreement with the previous report involving exfoliated bilayer graphene (BLG). Common electron doping behaviors were observed at various twist angles (0°, 5°, 12.5°, and 30°), and the adsorptions follow the first-order Langmuir-type adsorption model. Specifically, we analyzed the off-state currents, with band-gap openings of around 13 meV in tBLG with twist angle of 0°, as in Bernal-stacked BLG.
Original languageEnglish
Pages (from-to)1637-1641
Number of pages5
JournalCurrent Applied Physics
Volume16
Issue number12
DOIs
StatePublished - Dec 1 2016
Externally publishedYes

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