Abstract
Optical and electronic properties of lattice matched and strained quantum well laser media are analyzed for high carrier densities, combining many-body and band structure engineering techniques. The compressive strain yields more efficient inversion with consequent lower threshold carrier densities. The combined influence of strain and Coulomb effects on the α-factor causes a complicated dependence of α on the quantum well structure, laser frequency, carrier density, and threshold gain as observed in experiments.
| Original language | English |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Pages | 677-687 |
| Number of pages | 11 |
| Volume | 1985 |
| DOIs | |
| State | Published - Jan 1 1993 |
| Externally published | Yes |
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