Many-body treatment on the modulation response in a strained quantum well semiconductor laser medium

W. W. Chow; M. F. Pereira; S. W. Koch

doi:10.1063/1.107789

Many-body treatment on the modulation response in a strained quantum well semiconductor laser medium

W. W. Chow
, M. F. Pereira
, S. W. Koch

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

The carrier density modulation response of a semiconductor laser medium is analyzed. The differential gain and linewidth enhancement factor are computed as functions of strain and threshold gain. The example of InGaAs/InP with different InAs content is used to illustrate the situations of zero, tensile and compressive strain.

Original language	English
Pages (from-to)	758-760
Number of pages	3
Journal	Applied Physics Letters
Volume	61
Issue number	7
DOIs	https://doi.org/10.1063/1.107789
State	Published - Dec 1 1992
Externally published	Yes

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title = "Many-body treatment on the modulation response in a strained quantum well semiconductor laser medium",

abstract = "The carrier density modulation response of a semiconductor laser medium is analyzed. The differential gain and linewidth enhancement factor are computed as functions of strain and threshold gain. The example of InGaAs/InP with different InAs content is used to illustrate the situations of zero, tensile and compressive strain.",

author = "Chow, \{W. W.\} and Pereira, \{M. F.\} and Koch, \{S. W.\}",

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AU - Koch, S. W.

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Y1 - 1992/12/1

N2 - The carrier density modulation response of a semiconductor laser medium is analyzed. The differential gain and linewidth enhancement factor are computed as functions of strain and threshold gain. The example of InGaAs/InP with different InAs content is used to illustrate the situations of zero, tensile and compressive strain.

AB - The carrier density modulation response of a semiconductor laser medium is analyzed. The differential gain and linewidth enhancement factor are computed as functions of strain and threshold gain. The example of InGaAs/InP with different InAs content is used to illustrate the situations of zero, tensile and compressive strain.

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DO - 10.1063/1.107789

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Many-body treatment on the modulation response in a strained quantum well semiconductor laser medium

Abstract

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