Mapping electrostatic profiles across axial p-n junctions in Si nanowires using off-axis electron holography

Zhaofeng Gan; Daniel E. Perea; Jinkyoung Yoo; S. Tom Picraux; David J. Smith; Martha R. McCartney

doi:10.1063/1.4824775

Mapping electrostatic profiles across axial p-n junctions in Si nanowires using off-axis electron holography

Zhaofeng Gan
, Daniel E. Perea
, Jinkyoung Yoo
, S. Tom Picraux
, David J. Smith
, Martha R. McCartney

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Si nanowires (NWs) with axial p-n junctions were grown by the vapor-liquid-solid method. Transmission electron microscopy and electron holography were used to characterize the microstructure and electrostatic properties. Measurement of the potential profile showed the presence of a p-n junction with a height of 1.0 ± 0.3 V. A Schottky barrier was observed at the end of the NW due to the Au catalyst particle. Comparison with simulations indicated dopant concentrations of 1019 cm-3 for donors and 1017 cm-3 for acceptors. These results confirm the benefit of combining off-axis electron holography with simulations for determining localized information about the electrically active dopant distributions in nanowire structures. © 2013 AIP Publishing LLC.

Original language	English
Journal	Applied Physics Letters
Volume	103
Issue number	15
DOIs	https://doi.org/10.1063/1.4824775
State	Published - Oct 7 2013

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@article{111d53a29d56492db8a8af63b6764c23,

title = "Mapping electrostatic profiles across axial p-n junctions in Si nanowires using off-axis electron holography",

abstract = "Si nanowires (NWs) with axial p-n junctions were grown by the vapor-liquid-solid method. Transmission electron microscopy and electron holography were used to characterize the microstructure and electrostatic properties. Measurement of the potential profile showed the presence of a p-n junction with a height of 1.0 ± 0.3 V. A Schottky barrier was observed at the end of the NW due to the Au catalyst particle. Comparison with simulations indicated dopant concentrations of 1019 cm-3 for donors and 1017 cm-3 for acceptors. These results confirm the benefit of combining off-axis electron holography with simulations for determining localized information about the electrically active dopant distributions in nanowire structures. {\textcopyright} 2013 AIP Publishing LLC.",

author = "Zhaofeng Gan and Perea, \{Daniel E.\} and Jinkyoung Yoo and \{Tom Picraux\}, S. and Smith, \{David J.\} and McCartney, \{Martha R.\}",

year = "2013",

month = oct,

day = "7",

doi = "10.1063/1.4824775",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

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T1 - Mapping electrostatic profiles across axial p-n junctions in Si nanowires using off-axis electron holography

AU - Gan, Zhaofeng

AU - Perea, Daniel E.

AU - Yoo, Jinkyoung

AU - Tom Picraux, S.

AU - Smith, David J.

AU - McCartney, Martha R.

PY - 2013/10/7

Y1 - 2013/10/7

N2 - Si nanowires (NWs) with axial p-n junctions were grown by the vapor-liquid-solid method. Transmission electron microscopy and electron holography were used to characterize the microstructure and electrostatic properties. Measurement of the potential profile showed the presence of a p-n junction with a height of 1.0 ± 0.3 V. A Schottky barrier was observed at the end of the NW due to the Au catalyst particle. Comparison with simulations indicated dopant concentrations of 1019 cm-3 for donors and 1017 cm-3 for acceptors. These results confirm the benefit of combining off-axis electron holography with simulations for determining localized information about the electrically active dopant distributions in nanowire structures. © 2013 AIP Publishing LLC.

AB - Si nanowires (NWs) with axial p-n junctions were grown by the vapor-liquid-solid method. Transmission electron microscopy and electron holography were used to characterize the microstructure and electrostatic properties. Measurement of the potential profile showed the presence of a p-n junction with a height of 1.0 ± 0.3 V. A Schottky barrier was observed at the end of the NW due to the Au catalyst particle. Comparison with simulations indicated dopant concentrations of 1019 cm-3 for donors and 1017 cm-3 for acceptors. These results confirm the benefit of combining off-axis electron holography with simulations for determining localized information about the electrically active dopant distributions in nanowire structures. © 2013 AIP Publishing LLC.

UR - https://www.scopus.com/pages/publications/84886880088

U2 - 10.1063/1.4824775

DO - 10.1063/1.4824775

M3 - Article

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 15

ER -

Mapping electrostatic profiles across axial p-n junctions in Si nanowires using off-axis electron holography

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