Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys

J. Occena; T. Jen; J. W. Mitchell; W. M. Linhart; E. M. Pavelescu; R. Kudrawiec; Y. Q. Wang; R. S. Goldman

doi:10.1063/1.5057424

Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys

J. Occena
, T. Jen
, J. W. Mitchell
, W. M. Linhart
, E. M. Pavelescu
, R. Kudrawiec
, Y. Q. Wang
, R. S. Goldman

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

We have examined the alloy composition dependence of the energy bandgap and electronic states in GaAsNBi alloys. Using direct measurements of N and Bi mole fractions, via ion beam analysis, in conjunction with direct measurements of the out-of-plane misfit via x-ray rocking curves, we determine the "magic ratio" for lattice-matching of GaAsNBi alloys with GaAs substrates. In addition, using a combination of photoreflectance and photoluminescence spectroscopy, we map the composition- and misfit-dependence of the energy bandgaps, along with revealing the energetic position of Bi-related states at approximately 0.18 eV above the valence band maximum.

Original language	English
Article number	082106
Journal	Applied Physics Letters
Volume	115
Issue number	8
DOIs	https://doi.org/10.1063/1.5057424
State	Published - Aug 19 2019

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title = "Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys",

abstract = "We have examined the alloy composition dependence of the energy bandgap and electronic states in GaAsNBi alloys. Using direct measurements of N and Bi mole fractions, via ion beam analysis, in conjunction with direct measurements of the out-of-plane misfit via x-ray rocking curves, we determine the {"}magic ratio{"} for lattice-matching of GaAsNBi alloys with GaAs substrates. In addition, using a combination of photoreflectance and photoluminescence spectroscopy, we map the composition- and misfit-dependence of the energy bandgaps, along with revealing the energetic position of Bi-related states at approximately 0.18 eV above the valence band maximum.",

author = "J. Occena and T. Jen and Mitchell, \{J. W.\} and Linhart, \{W. M.\} and Pavelescu, \{E. M.\} and R. Kudrawiec and Wang, \{Y. Q.\} and Goldman, \{R. S.\}",

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doi = "10.1063/1.5057424",

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T1 - Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys

AU - Occena, J.

AU - Jen, T.

AU - Mitchell, J. W.

AU - Linhart, W. M.

AU - Pavelescu, E. M.

AU - Kudrawiec, R.

AU - Wang, Y. Q.

AU - Goldman, R. S.

PY - 2019/8/19

Y1 - 2019/8/19

N2 - We have examined the alloy composition dependence of the energy bandgap and electronic states in GaAsNBi alloys. Using direct measurements of N and Bi mole fractions, via ion beam analysis, in conjunction with direct measurements of the out-of-plane misfit via x-ray rocking curves, we determine the "magic ratio" for lattice-matching of GaAsNBi alloys with GaAs substrates. In addition, using a combination of photoreflectance and photoluminescence spectroscopy, we map the composition- and misfit-dependence of the energy bandgaps, along with revealing the energetic position of Bi-related states at approximately 0.18 eV above the valence band maximum.

AB - We have examined the alloy composition dependence of the energy bandgap and electronic states in GaAsNBi alloys. Using direct measurements of N and Bi mole fractions, via ion beam analysis, in conjunction with direct measurements of the out-of-plane misfit via x-ray rocking curves, we determine the "magic ratio" for lattice-matching of GaAsNBi alloys with GaAs substrates. In addition, using a combination of photoreflectance and photoluminescence spectroscopy, we map the composition- and misfit-dependence of the energy bandgaps, along with revealing the energetic position of Bi-related states at approximately 0.18 eV above the valence band maximum.

UR - https://www.scopus.com/pages/publications/85071528769

U2 - 10.1063/1.5057424

DO - 10.1063/1.5057424

M3 - Article

SN - 0003-6951

VL - 115

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082106

ER -

Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys

Abstract

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