Abstract
Here, we demonstrate direct, maskless creation of single silicon-vacancy centers in diamond nanostructures via focused ion beam implantation with < 50 nm positioning precision and close to lifetime-limited emission linewidth of ∼ 126 ± 13 MHz.
| Original language | English |
|---|---|
| Title of host publication | Optics InfoBase Conference Papers |
| State | Published - Jan 1 2016 |
| Externally published | Yes |
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