Mechanism for modulation response improvement in mutually injection-locked semiconductor lasers

Zhenshan Yang; Anna Tauke-Pedretti; G. Allen Vawter; Weng W. Chow

doi:10.1109/JQE.2010.2083638

Mechanism for modulation response improvement in mutually injection-locked semiconductor lasers

Zhenshan Yang
, Anna Tauke-Pedretti
, G. Allen Vawter
, Weng W. Chow

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The modulation response (MR) improvement in mutually injection-locked semiconductor lasers is analyzed. We show that the system becomes increasingly sensitive to the modulation when its operation point approaches the lock band boundary, suggesting that the MR enhancement results from a modulation-induced transition between locked and unlocked operations of the laser system. © 2006 IEEE.

Original language	English
Pages (from-to)	300-305
Number of pages	6
Journal	IEEE Journal of Quantum Electronics
Volume	47
Issue number	3
DOIs	https://doi.org/10.1109/JQE.2010.2083638
State	Published - Mar 1 2011
Externally published	Yes

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@article{e1e9296c37894dbeaba120130714c825,

title = "Mechanism for modulation response improvement in mutually injection-locked semiconductor lasers",

abstract = "The modulation response (MR) improvement in mutually injection-locked semiconductor lasers is analyzed. We show that the system becomes increasingly sensitive to the modulation when its operation point approaches the lock band boundary, suggesting that the MR enhancement results from a modulation-induced transition between locked and unlocked operations of the laser system. {\textcopyright} 2006 IEEE.",

author = "Zhenshan Yang and Anna Tauke-Pedretti and Vawter, \{G. Allen\} and Chow, \{Weng W.\}",

year = "2011",

month = mar,

day = "1",

doi = "10.1109/JQE.2010.2083638",

language = "English",

volume = "47",

pages = "300--305",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Mechanism for modulation response improvement in mutually injection-locked semiconductor lasers

AU - Yang, Zhenshan

AU - Tauke-Pedretti, Anna

AU - Vawter, G. Allen

AU - Chow, Weng W.

PY - 2011/3/1

Y1 - 2011/3/1

N2 - The modulation response (MR) improvement in mutually injection-locked semiconductor lasers is analyzed. We show that the system becomes increasingly sensitive to the modulation when its operation point approaches the lock band boundary, suggesting that the MR enhancement results from a modulation-induced transition between locked and unlocked operations of the laser system. © 2006 IEEE.

AB - The modulation response (MR) improvement in mutually injection-locked semiconductor lasers is analyzed. We show that the system becomes increasingly sensitive to the modulation when its operation point approaches the lock band boundary, suggesting that the MR enhancement results from a modulation-induced transition between locked and unlocked operations of the laser system. © 2006 IEEE.

UR - https://www.scopus.com/pages/publications/79952000008

U2 - 10.1109/JQE.2010.2083638

DO - 10.1109/JQE.2010.2083638

M3 - Article

SN - 0018-9197

VL - 47

SP - 300

EP - 305

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 3

ER -

Mechanism for modulation response improvement in mutually injection-locked semiconductor lasers

Abstract

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