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Mechanisms for ion-irradiation-induced relaxation of stress in mosaic structured Cu thin films

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Abstract

In this paper, helium (He) ion irradiations with various fluences were performed on sputtered Cu thin films with a mosaic structure to evolve biaxial stress. X-ray diffraction of the θ-2θ method was used to determine the residual strains in the thin films by measuring the spacing of the crystallographic planes. The results show the in-plane biaxial tensile stress has been reduced by ion irradiation. A new proposed model is discussed to explain the ion-irradiation-induced stress release in mosaic structured Cu thin films.

Original languageEnglish
Article number495303
JournalJournal of Physics D: Applied Physics
Volume45
Issue number49
DOIs
StatePublished - Dec 12 2012

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