Metalorganic molecular beam epitaxy of InP, Ga<inf>0.47</inf>In <inf>0.53</inf>As, and GaAs with tertiarybutylarsine and tertiarybutylphosphine

Thermally cracked tertiarybutylarsine and tertiarybutylphosphine were used to replace AsH3 and PH3 for the growth of Ga 0.47In0.53As and InP by metalorganic molecular beam epitaxy. For both materials, carrier concentrations n=(1-2)×10 15 cm-3 were obtained at 300 and 77 K, with 77 K mobilities of 29 000 and 31 000 cm2 V-1 s-1. The GaAs was p-type with p=4×1015 cm-3 at both temperatures and a 77 K mobility of 2200 cm2 V-1 s-1. The lifetimes for carriers in 14-60 Å thick quantum wells were 3±1 ns. The reacting arsenic species for epitaxy were As2 and As4. The reacting phosphorus species were PH2 and possibly PH.