Microscopic gain theory for group III nitride semiconductor quantum wells

A. Girndt; F. Jahnke; S. W. Koch; W. W. Chow

doi:10.1016/S0921-5107(97)00158-X

Microscopic gain theory for group III nitride semiconductor quantum wells

A. Girndt
, F. Jahnke
, S. W. Koch
, W. W. Chow

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The gain/absorption properties of III-V nitride quantum well systems are computed microscopically using multi-band semiconductor Bloch equations. Lineshape and dephasing are treated at the level of quantum kinetic theory in second Born approximation in the Markovian limit. The compositional and structural properties of the quantum wells are modelled using k · p theory. Numerical results are presented for the example of several InGaN/AIGaN structures. © 1997 Elsevier Science S.A.

Original language	English
Pages (from-to)	174-179
Number of pages	6
Journal	Materials Science and Engineering B
Volume	50
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(97)00158-X
State	Published - Dec 18 1997
Externally published	Yes

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title = "Microscopic gain theory for group III nitride semiconductor quantum wells",

abstract = "The gain/absorption properties of III-V nitride quantum well systems are computed microscopically using multi-band semiconductor Bloch equations. Lineshape and dephasing are treated at the level of quantum kinetic theory in second Born approximation in the Markovian limit. The compositional and structural properties of the quantum wells are modelled using k · p theory. Numerical results are presented for the example of several InGaN/AIGaN structures. {\textcopyright} 1997 Elsevier Science S.A.",

author = "A. Girndt and F. Jahnke and Koch, \{S. W.\} and Chow, \{W. W.\}",

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T1 - Microscopic gain theory for group III nitride semiconductor quantum wells

AU - Girndt, A.

AU - Jahnke, F.

AU - Koch, S. W.

AU - Chow, W. W.

PY - 1997/12/18

Y1 - 1997/12/18

N2 - The gain/absorption properties of III-V nitride quantum well systems are computed microscopically using multi-band semiconductor Bloch equations. Lineshape and dephasing are treated at the level of quantum kinetic theory in second Born approximation in the Markovian limit. The compositional and structural properties of the quantum wells are modelled using k · p theory. Numerical results are presented for the example of several InGaN/AIGaN structures. © 1997 Elsevier Science S.A.

AB - The gain/absorption properties of III-V nitride quantum well systems are computed microscopically using multi-band semiconductor Bloch equations. Lineshape and dephasing are treated at the level of quantum kinetic theory in second Born approximation in the Markovian limit. The compositional and structural properties of the quantum wells are modelled using k · p theory. Numerical results are presented for the example of several InGaN/AIGaN structures. © 1997 Elsevier Science S.A.

UR - https://www.scopus.com/pages/publications/0031356699

U2 - 10.1016/S0921-5107(97)00158-X

DO - 10.1016/S0921-5107(97)00158-X

M3 - Article

SN - 0921-5107

VL - 50

SP - 174

EP - 179

JO - Materials Science and Engineering B

JF - Materials Science and Engineering B

IS - 1-3

ER -

Microscopic gain theory for group III nitride semiconductor quantum wells

Abstract

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