Microscopic Modeling of Gain and Luminescence in Semiconductor

Jörg Hader; Jerome V. Moloney; Stephan W. Koch; Weng W. Chow

doi:10.1109/JSTQE.2003.818342

Microscopic Modeling of Gain and Luminescence in Semiconductor

Jörg Hader
, Jerome V. Moloney
, Stephan W. Koch
, Weng W. Chow

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

54 Scopus citations

Abstract

The capabilities of a fully microscopic approach for the calculation of optical material properties of semiconductor lasers are reviewed. Several comparisons between the results of these calculations and measured data are used to demonstrate that the approach yields excellent quantitative agreement with the experiment. It is outlined how this approach allows one to predict the optical properties of devices under high-power operating conditions based only on low-intensity photo luminescence (PL) spectra. Examples for the gain-, absorption-, PL- and linewidth enhancement factor-spectra in single and multiple quantum-well structures, superlattices, Type II quantum wells and quantum dots, and for various material systems are discussed.

Original language	English
Title of host publication	IEEE Journal on Selected Topics in Quantum Electronics
Pages	688-697
Number of pages	10
Volume	9
Edition	3
DOIs	https://doi.org/10.1109/JSTQE.2003.818342
State	Published - May 1 2003
Externally published	Yes

Access to Document

10.1109/JSTQE.2003.818342

Cite this

@inproceedings{c4c5962c03c34134af15f223faba8cab,

title = "Microscopic Modeling of Gain and Luminescence in Semiconductor",

abstract = "The capabilities of a fully microscopic approach for the calculation of optical material properties of semiconductor lasers are reviewed. Several comparisons between the results of these calculations and measured data are used to demonstrate that the approach yields excellent quantitative agreement with the experiment. It is outlined how this approach allows one to predict the optical properties of devices under high-power operating conditions based only on low-intensity photo luminescence (PL) spectra. Examples for the gain-, absorption-, PL- and linewidth enhancement factor-spectra in single and multiple quantum-well structures, superlattices, Type II quantum wells and quantum dots, and for various material systems are discussed.",

author = "J{\"o}rg Hader and Moloney, \{Jerome V.\} and Koch, \{Stephan W.\} and Chow, \{Weng W.\}",

year = "2003",

month = may,

day = "1",

doi = "10.1109/JSTQE.2003.818342",

language = "English",

volume = "9",

pages = "688--697",

booktitle = "IEEE Journal on Selected Topics in Quantum Electronics",

edition = "3",

}

TY - GEN

T1 - Microscopic Modeling of Gain and Luminescence in Semiconductor

AU - Hader, Jörg

AU - Moloney, Jerome V.

AU - Koch, Stephan W.

AU - Chow, Weng W.

PY - 2003/5/1

Y1 - 2003/5/1

N2 - The capabilities of a fully microscopic approach for the calculation of optical material properties of semiconductor lasers are reviewed. Several comparisons between the results of these calculations and measured data are used to demonstrate that the approach yields excellent quantitative agreement with the experiment. It is outlined how this approach allows one to predict the optical properties of devices under high-power operating conditions based only on low-intensity photo luminescence (PL) spectra. Examples for the gain-, absorption-, PL- and linewidth enhancement factor-spectra in single and multiple quantum-well structures, superlattices, Type II quantum wells and quantum dots, and for various material systems are discussed.

AB - The capabilities of a fully microscopic approach for the calculation of optical material properties of semiconductor lasers are reviewed. Several comparisons between the results of these calculations and measured data are used to demonstrate that the approach yields excellent quantitative agreement with the experiment. It is outlined how this approach allows one to predict the optical properties of devices under high-power operating conditions based only on low-intensity photo luminescence (PL) spectra. Examples for the gain-, absorption-, PL- and linewidth enhancement factor-spectra in single and multiple quantum-well structures, superlattices, Type II quantum wells and quantum dots, and for various material systems are discussed.

UR - https://www.scopus.com/pages/publications/0344092123

U2 - 10.1109/JSTQE.2003.818342

DO - 10.1109/JSTQE.2003.818342

M3 - Conference contribution

VL - 9

SP - 688

EP - 697

BT - IEEE Journal on Selected Topics in Quantum Electronics

ER -

Microscopic Modeling of Gain and Luminescence in Semiconductor

Abstract

Access to Document

Fingerprint

Cite this