Microscopic modelling of bulk and quantum-well GaAs-based semiconductor lasers

P. Ru; J. V. Moloney; R. Indik; S. W. Koch; W. W. Chow

doi:10.1007/BF00430557

Microscopic modelling of bulk and quantum-well GaAs-based semiconductor lasers

P. Ru
, J. V. Moloney
, R. Indik
, S. W. Koch
, W. W. Chow

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

The dynamical behaviour of Fabry-Perot type semiconductor lasers is modelled, including the relevant many-body Coulomb effects of the excited carriers. Conditions are given under which a parametrization of the full model is possible, allowing simple analytic relations for local gain, refractive index and linewidth enhancement factor. The parameters of the simplified model are uniquely determined by the microscopic theory and have to be optimized for the respective operating conditions. The theory is evaluated for bulk and quantum-well GaAs active material and a variety of laser structures, including strongly and weakly index-guided structures, as well as purely guided single-and twin-stripe lasers. © 1993 Chapman & Hall.

Original language	English
Pages (from-to)	675-693
Number of pages	19
Journal	Optical and Quantum Electronics
Volume	25
Issue number	10
DOIs	https://doi.org/10.1007/BF00430557
State	Published - Oct 1 1993
Externally published	Yes

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@article{6571d34b4d9e4aee9b0b1e7e7f72fe93,

title = "Microscopic modelling of bulk and quantum-well GaAs-based semiconductor lasers",

abstract = "The dynamical behaviour of Fabry-Perot type semiconductor lasers is modelled, including the relevant many-body Coulomb effects of the excited carriers. Conditions are given under which a parametrization of the full model is possible, allowing simple analytic relations for local gain, refractive index and linewidth enhancement factor. The parameters of the simplified model are uniquely determined by the microscopic theory and have to be optimized for the respective operating conditions. The theory is evaluated for bulk and quantum-well GaAs active material and a variety of laser structures, including strongly and weakly index-guided structures, as well as purely guided single-and twin-stripe lasers. {\textcopyright} 1993 Chapman \& Hall.",

author = "P. Ru and Moloney, \{J. V.\} and R. Indik and Koch, \{S. W.\} and Chow, \{W. W.\}",

year = "1993",

month = oct,

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doi = "10.1007/BF00430557",

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TY - JOUR

T1 - Microscopic modelling of bulk and quantum-well GaAs-based semiconductor lasers

AU - Ru, P.

AU - Moloney, J. V.

AU - Indik, R.

AU - Koch, S. W.

AU - Chow, W. W.

PY - 1993/10/1

Y1 - 1993/10/1

N2 - The dynamical behaviour of Fabry-Perot type semiconductor lasers is modelled, including the relevant many-body Coulomb effects of the excited carriers. Conditions are given under which a parametrization of the full model is possible, allowing simple analytic relations for local gain, refractive index and linewidth enhancement factor. The parameters of the simplified model are uniquely determined by the microscopic theory and have to be optimized for the respective operating conditions. The theory is evaluated for bulk and quantum-well GaAs active material and a variety of laser structures, including strongly and weakly index-guided structures, as well as purely guided single-and twin-stripe lasers. © 1993 Chapman & Hall.

AB - The dynamical behaviour of Fabry-Perot type semiconductor lasers is modelled, including the relevant many-body Coulomb effects of the excited carriers. Conditions are given under which a parametrization of the full model is possible, allowing simple analytic relations for local gain, refractive index and linewidth enhancement factor. The parameters of the simplified model are uniquely determined by the microscopic theory and have to be optimized for the respective operating conditions. The theory is evaluated for bulk and quantum-well GaAs active material and a variety of laser structures, including strongly and weakly index-guided structures, as well as purely guided single-and twin-stripe lasers. © 1993 Chapman & Hall.

UR - https://www.scopus.com/pages/publications/0027681555

U2 - 10.1007/BF00430557

DO - 10.1007/BF00430557

M3 - Article

SN - 0306-8919

VL - 25

SP - 675

EP - 693

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

IS - 10

ER -

Microscopic modelling of bulk and quantum-well GaAs-based semiconductor lasers

Abstract

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