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Microscopic simulation of semiconductor lasers in the GaInNAs material system

  • A. Thränhardt
  • , C. Schlichenmaier
  • , I. Kuznetsova
  • , S. W. Koch
  • , W. W. Chow
  • , J. Hader
  • , J. V. Moloney

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

(GaIn)(NAs) lasers of different material compositions are considered with respect to their gain properties and radiative and Auger losses. Scattering and dephasing processes are included on a microscopic basis. The theory shows good agreement to experiment. Optical properties for a 1.55 μm structure are investigated and show no principal degradation as compared to a 1.3 μm structure. © 2006 IEEE.
Original languageEnglish
Title of host publication2006 International Conference on Numerical Simulation of Semiconductor Optoelectronic Devices, NUSOD '06
Pages3-4
Number of pages2
DOIs
StatePublished - Dec 1 2006
Externally publishedYes

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