Microscopic theory of laser gain in semiconductor quantum wells

A. Girndt; S. W. Koch; W. W. Chow

doi:10.1007/s003390050630

Microscopic theory of laser gain in semiconductor quantum wells

A. Girndt
, S. W. Koch
, W. W. Chow

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

This article reviews a microscopic theory to compute gain and absorption spectra of semiconductor quantum-well structures. The single-particle energies (band structure) are calculated by using Luttinger-Kohn theory in the envelope function approximation. The Coulomb-interacting electron-hole plasma in the laser gain region is treated at the level of quantum-kinetic equations in the Markov limit. Examples for results are presented for narrow- and wide-gap III-V and II-VI quantum-well systems. © Springer-Verlag 1998.

Original language	English
Pages (from-to)	1-12
Number of pages	12
Journal	Applied Physics A: Materials Science and Processing
Volume	66
Issue number	1
DOIs	https://doi.org/10.1007/s003390050630
State	Published - Jan 1 1998
Externally published	Yes

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title = "Microscopic theory of laser gain in semiconductor quantum wells",

abstract = "This article reviews a microscopic theory to compute gain and absorption spectra of semiconductor quantum-well structures. The single-particle energies (band structure) are calculated by using Luttinger-Kohn theory in the envelope function approximation. The Coulomb-interacting electron-hole plasma in the laser gain region is treated at the level of quantum-kinetic equations in the Markov limit. Examples for results are presented for narrow- and wide-gap III-V and II-VI quantum-well systems. {\textcopyright} Springer-Verlag 1998.",

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AU - Girndt, A.

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AU - Chow, W. W.

PY - 1998/1/1

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N2 - This article reviews a microscopic theory to compute gain and absorption spectra of semiconductor quantum-well structures. The single-particle energies (band structure) are calculated by using Luttinger-Kohn theory in the envelope function approximation. The Coulomb-interacting electron-hole plasma in the laser gain region is treated at the level of quantum-kinetic equations in the Markov limit. Examples for results are presented for narrow- and wide-gap III-V and II-VI quantum-well systems. © Springer-Verlag 1998.

AB - This article reviews a microscopic theory to compute gain and absorption spectra of semiconductor quantum-well structures. The single-particle energies (band structure) are calculated by using Luttinger-Kohn theory in the envelope function approximation. The Coulomb-interacting electron-hole plasma in the laser gain region is treated at the level of quantum-kinetic equations in the Markov limit. Examples for results are presented for narrow- and wide-gap III-V and II-VI quantum-well systems. © Springer-Verlag 1998.

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JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

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Microscopic theory of laser gain in semiconductor quantum wells

Abstract

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