Microsecond time scale lateral-mode dynamics in a narrow stripe InGaN laser

Christoph Eichler; Daniel Hofstetter; Weng W. Chow; Stephan Miller; Andreas Weimar; Alfred Lell; Volker Härle

doi:10.1063/1.1691497

Microsecond time scale lateral-mode dynamics in a narrow stripe InGaN laser

Christoph Eichler
, Daniel Hofstetter
, Weng W. Chow
, Stephan Miller
, Andreas Weimar
, Alfred Lell
, Volker Härle

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

The lateral-mode changes and gradual tilting of the far field on a microsecond time scale in InGaN-based laser diodes were analyzed using time-resolved measurements. OSRAM Opto Semiconductors were used to fabricate the laser diodes. The laser diodes were grown on a SiC substrate without ELO techniques by metalorganic chemical vapor deposition. The light of the temperature stabilized laser diode was collimated and then focused on the entrance slit of a grating monochromator, for measurements of the time-resolved optical spectrum. The results show that the observed effects are attributed to lateral carrier diffusion in combination with thermal lensing.

Original language	English
Pages (from-to)	2473-2475
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	14
DOIs	https://doi.org/10.1063/1.1691497
State	Published - Apr 5 2004
Externally published	Yes

Access to Document

10.1063/1.1691497

Cite this

@article{dfea5af5ce974b6e9cbb24bcc820e4cc,

title = "Microsecond time scale lateral-mode dynamics in a narrow stripe InGaN laser",

abstract = "The lateral-mode changes and gradual tilting of the far field on a microsecond time scale in InGaN-based laser diodes were analyzed using time-resolved measurements. OSRAM Opto Semiconductors were used to fabricate the laser diodes. The laser diodes were grown on a SiC substrate without ELO techniques by metalorganic chemical vapor deposition. The light of the temperature stabilized laser diode was collimated and then focused on the entrance slit of a grating monochromator, for measurements of the time-resolved optical spectrum. The results show that the observed effects are attributed to lateral carrier diffusion in combination with thermal lensing.",

author = "Christoph Eichler and Daniel Hofstetter and Chow, \{Weng W.\} and Stephan Miller and Andreas Weimar and Alfred Lell and Volker H{\"a}rle",

year = "2004",

month = apr,

day = "5",

doi = "10.1063/1.1691497",

language = "English",

volume = "84",

pages = "2473--2475",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "14",

}

TY - JOUR

T1 - Microsecond time scale lateral-mode dynamics in a narrow stripe InGaN laser

AU - Eichler, Christoph

AU - Hofstetter, Daniel

AU - Chow, Weng W.

AU - Miller, Stephan

AU - Weimar, Andreas

AU - Lell, Alfred

AU - Härle, Volker

PY - 2004/4/5

Y1 - 2004/4/5

N2 - The lateral-mode changes and gradual tilting of the far field on a microsecond time scale in InGaN-based laser diodes were analyzed using time-resolved measurements. OSRAM Opto Semiconductors were used to fabricate the laser diodes. The laser diodes were grown on a SiC substrate without ELO techniques by metalorganic chemical vapor deposition. The light of the temperature stabilized laser diode was collimated and then focused on the entrance slit of a grating monochromator, for measurements of the time-resolved optical spectrum. The results show that the observed effects are attributed to lateral carrier diffusion in combination with thermal lensing.

AB - The lateral-mode changes and gradual tilting of the far field on a microsecond time scale in InGaN-based laser diodes were analyzed using time-resolved measurements. OSRAM Opto Semiconductors were used to fabricate the laser diodes. The laser diodes were grown on a SiC substrate without ELO techniques by metalorganic chemical vapor deposition. The light of the temperature stabilized laser diode was collimated and then focused on the entrance slit of a grating monochromator, for measurements of the time-resolved optical spectrum. The results show that the observed effects are attributed to lateral carrier diffusion in combination with thermal lensing.

UR - https://www.scopus.com/pages/publications/2342448471

U2 - 10.1063/1.1691497

DO - 10.1063/1.1691497

M3 - Article

SN - 0003-6951

VL - 84

SP - 2473

EP - 2475

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Microsecond time scale lateral-mode dynamics in a narrow stripe InGaN laser

Abstract

Access to Document

Fingerprint

Cite this