Abstract
We studied the transient lateral mode behavior of a 2.25 μm wide InGaN/GaN-based laser diode. At the beginning of a 9 μs long current pulse, the diode heats up, undergoes a lateral mode transition and finally shows a beam steering due to lateral carrier diffusion. ©2002 Optical Society of America.
| Original language | English |
|---|---|
| Title of host publication | OSA Trends in Optics and Photonics Series |
| Pages | 250-251 |
| Number of pages | 2 |
| Volume | 88 |
| State | Published - Jan 1 2003 |
| Externally published | Yes |
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