Microsecond timescale lateral mode dynamics in a narrow stripe InGaN-laser

Christoph Eichler; Sven Silvius Schad; Daniel Hofstetter; Weng W. Chow; Stephan Miller; Andreas Weimar; Alfred Lell; Volker Härle

Microsecond timescale lateral mode dynamics in a narrow stripe InGaN-laser

Christoph Eichler
, Sven Silvius Schad
, Daniel Hofstetter
, Weng W. Chow
, Stephan Miller
, Andreas Weimar
, Alfred Lell
, Volker Härle

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We studied the transient lateral mode behavior of a 2.25 µm wide InGaN/GaN-based laser diode. At the beginning of a 9 µs long current pulse, the diode heats up, undergoes a lateral mode transition and finally shows a beam steering due to lateral carrier diffusion.

Original language	English
Title of host publication	Optics InfoBase Conference Papers
State	Published - Jan 1 2003
Externally published	Yes

Cite this

@inproceedings{bc31545e85154d51aef9dbde0b8d2e7f,

title = "Microsecond timescale lateral mode dynamics in a narrow stripe InGaN-laser",

abstract = "We studied the transient lateral mode behavior of a 2.25 µm wide InGaN/GaN-based laser diode. At the beginning of a 9 µs long current pulse, the diode heats up, undergoes a lateral mode transition and finally shows a beam steering due to lateral carrier diffusion.",

author = "Christoph Eichler and Schad, \{Sven Silvius\} and Daniel Hofstetter and Chow, \{Weng W.\} and Stephan Miller and Andreas Weimar and Alfred Lell and Volker H{\"a}rle",

year = "2003",

month = jan,

day = "1",

language = "English",

isbn = "1557527334",

booktitle = "Optics InfoBase Conference Papers",

}

TY - GEN

T1 - Microsecond timescale lateral mode dynamics in a narrow stripe InGaN-laser

AU - Eichler, Christoph

AU - Schad, Sven Silvius

AU - Hofstetter, Daniel

AU - Chow, Weng W.

AU - Miller, Stephan

AU - Weimar, Andreas

AU - Lell, Alfred

AU - Härle, Volker

PY - 2003/1/1

Y1 - 2003/1/1

N2 - We studied the transient lateral mode behavior of a 2.25 µm wide InGaN/GaN-based laser diode. At the beginning of a 9 µs long current pulse, the diode heats up, undergoes a lateral mode transition and finally shows a beam steering due to lateral carrier diffusion.

AB - We studied the transient lateral mode behavior of a 2.25 µm wide InGaN/GaN-based laser diode. At the beginning of a 9 µs long current pulse, the diode heats up, undergoes a lateral mode transition and finally shows a beam steering due to lateral carrier diffusion.

UR - https://www.scopus.com/pages/publications/85136300824

M3 - Conference contribution

SN - 1557527334

BT - Optics InfoBase Conference Papers

ER -

Microsecond timescale lateral mode dynamics in a narrow stripe InGaN-laser

Abstract

Fingerprint

Cite this