Model diffraction profiles parallel to rough step edges

R. Kariotis; B. S. Swartzentruber; M. G. Lagally

doi:10.1063/1.345454

Model diffraction profiles parallel to rough step edges

R. Kariotis
, B. S. Swartzentruber
, M. G. Lagally

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

Modeling of rough step edges has been made and compared with scanning tunneling microscopy (STM) micrographs. In this paper, we use a phenomenological Hamiltonian to calculate diffraction profiles which can be used to determine the extent of step-edge meandering. Comparison with experiment is made based on a parametrization of the step statistics obtained from STM data of silicon (001) step edges.

Original language	English
Pages (from-to)	2848-2852
Number of pages	5
Journal	Journal of Applied Physics
Volume	67
Issue number	6
DOIs	https://doi.org/10.1063/1.345454
State	Published - Dec 1 1990
Externally published	Yes

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title = "Model diffraction profiles parallel to rough step edges",

abstract = "Modeling of rough step edges has been made and compared with scanning tunneling microscopy (STM) micrographs. In this paper, we use a phenomenological Hamiltonian to calculate diffraction profiles which can be used to determine the extent of step-edge meandering. Comparison with experiment is made based on a parametrization of the step statistics obtained from STM data of silicon (001) step edges.",

author = "R. Kariotis and Swartzentruber, \{B. S.\} and Lagally, \{M. G.\}",

year = "1990",

month = dec,

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doi = "10.1063/1.345454",

language = "English",

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journal = "Journal of Applied Physics",

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T1 - Model diffraction profiles parallel to rough step edges

AU - Kariotis, R.

AU - Swartzentruber, B. S.

AU - Lagally, M. G.

PY - 1990/12/1

Y1 - 1990/12/1

N2 - Modeling of rough step edges has been made and compared with scanning tunneling microscopy (STM) micrographs. In this paper, we use a phenomenological Hamiltonian to calculate diffraction profiles which can be used to determine the extent of step-edge meandering. Comparison with experiment is made based on a parametrization of the step statistics obtained from STM data of silicon (001) step edges.

AB - Modeling of rough step edges has been made and compared with scanning tunneling microscopy (STM) micrographs. In this paper, we use a phenomenological Hamiltonian to calculate diffraction profiles which can be used to determine the extent of step-edge meandering. Comparison with experiment is made based on a parametrization of the step statistics obtained from STM data of silicon (001) step edges.

UR - https://www.scopus.com/pages/publications/36549102912

U2 - 10.1063/1.345454

DO - 10.1063/1.345454

M3 - Article

SN - 0021-8979

VL - 67

SP - 2848

EP - 2852

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Model diffraction profiles parallel to rough step edges

Abstract

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