Model for a semiconductor quantum-dot nanolaser

W. W. Chow; F. Jahnke; C. Gies

doi:10.1109/NUSOD.2014.6935328

Model for a semiconductor quantum-dot nanolaser

W. W. Chow
, F. Jahnke
, C. Gies

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A quantum-electrodynamics model is developed for a nanolaser with a semiconductor quantum-dot gain region. Intensity, coherence time and photon autocorrelation function are calculated, especially during transition from below to above lasing threshold.

Original language	English
Title of host publication	Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Pages	5-6
Number of pages	2
DOIs	https://doi.org/10.1109/NUSOD.2014.6935328
State	Published - Oct 23 2014
Externally published	Yes

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10.1109/NUSOD.2014.6935328

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title = "Model for a semiconductor quantum-dot nanolaser",

abstract = "A quantum-electrodynamics model is developed for a nanolaser with a semiconductor quantum-dot gain region. Intensity, coherence time and photon autocorrelation function are calculated, especially during transition from below to above lasing threshold.",

author = "Chow, \{W. W.\} and F. Jahnke and C. Gies",

year = "2014",

month = oct,

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doi = "10.1109/NUSOD.2014.6935328",

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AU - Gies, C.

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AB - A quantum-electrodynamics model is developed for a nanolaser with a semiconductor quantum-dot gain region. Intensity, coherence time and photon autocorrelation function are calculated, especially during transition from below to above lasing threshold.

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DO - 10.1109/NUSOD.2014.6935328

M3 - Conference contribution

SN - 9781479936823

SP - 5

EP - 6

BT - Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD

ER -

Model for a semiconductor quantum-dot nanolaser

Abstract

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