Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor

Xujiao Gao; Juan P. Mendez; Tzu Ming Lu; Evan M. Anderson; Deanna M. Campbell; Jeffrey A. Ivie; Scott W. Schmucker; Albert Grine; Ping Lu; Lisa A. Tracy; Reza Arghavani; Shashank Misra

doi:10.1109/SISPAD54002.2021.9592578

Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor

Xujiao Gao
, Juan P. Mendez
, Tzu Ming Lu
, Evan M. Anderson
, Deanna M. Campbell
, Jeffrey A. Ivie
, Scott W. Schmucker
, Albert Grine
, Ping Lu
, Lisa A. Tracy
, Reza Arghavani
, Shashank Misra

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

The atomic precision advanced manufacturing (APAM) enabled vertical tunneling field effect transistor (TFET) presents a new opportunity in microelectronics thanks to the use of ultra-high doping and atomically abrupt doping profiles. We present modeling and assessment of the APAM TFET using TCAD Charon simulation. First, we show, through a combination of simulation and experiment, that we can achieve good control of the gated channel on top of a phosphorus layer made using APAM, an essential part of the APAM TFET. Then, we present simulation results of a preliminary APAM TFET that predict transistor-like current-voltage response despite low device performance caused by using large geometry dimensions. Future device simulations will be needed to optimize geometry and doping to guide device design for achieving superior device performance.

Original language	English
Title of host publication	International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
Pages	102-106
Number of pages	5
Volume	2021-September
DOIs	https://doi.org/10.1109/SISPAD54002.2021.9592578
State	Published - Sep 27 2021
Externally published	Yes

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10.1109/SISPAD54002.2021.9592578

Cite this

Gao, X., Mendez, J. P., Lu, T. M., Anderson, E. M., Campbell, D. M., Ivie, J. A., Schmucker, S. W., Grine, A., Lu, P., Tracy, L. A., Arghavani, R., & Misra, S. (2021). Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor. In International Conference on Simulation of Semiconductor Processes and Devices, SISPAD (Vol. 2021-September, pp. 102-106) https://doi.org/10.1109/SISPAD54002.2021.9592578

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title = "Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor",

abstract = "The atomic precision advanced manufacturing (APAM) enabled vertical tunneling field effect transistor (TFET) presents a new opportunity in microelectronics thanks to the use of ultra-high doping and atomically abrupt doping profiles. We present modeling and assessment of the APAM TFET using TCAD Charon simulation. First, we show, through a combination of simulation and experiment, that we can achieve good control of the gated channel on top of a phosphorus layer made using APAM, an essential part of the APAM TFET. Then, we present simulation results of a preliminary APAM TFET that predict transistor-like current-voltage response despite low device performance caused by using large geometry dimensions. Future device simulations will be needed to optimize geometry and doping to guide device design for achieving superior device performance.",

author = "Xujiao Gao and Mendez, \{Juan P.\} and Lu, \{Tzu Ming\} and Anderson, \{Evan M.\} and Campbell, \{Deanna M.\} and Ivie, \{Jeffrey A.\} and Schmucker, \{Scott W.\} and Albert Grine and Ping Lu and Tracy, \{Lisa A.\} and Reza Arghavani and Shashank Misra",

year = "2021",

month = sep,

day = "27",

doi = "10.1109/SISPAD54002.2021.9592578",

language = "English",

isbn = "9781665406857",

volume = "2021-September",

pages = "102--106",

booktitle = "International Conference on Simulation of Semiconductor Processes and Devices, SISPAD",

}

Gao, X, Mendez, JP, Lu, TM, Anderson, EM, Campbell, DM, Ivie, JA, Schmucker, SW, Grine, A, Lu, P, Tracy, LA, Arghavani, R & Misra, S 2021, Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor. in International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. vol. 2021-September, pp. 102-106. https://doi.org/10.1109/SISPAD54002.2021.9592578

Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor. / Gao, Xujiao; Mendez, Juan P.; Lu, Tzu Ming et al.
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD. Vol. 2021-September 2021. p. 102-106.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor

AU - Gao, Xujiao

AU - Mendez, Juan P.

AU - Lu, Tzu Ming

AU - Anderson, Evan M.

AU - Campbell, Deanna M.

AU - Ivie, Jeffrey A.

AU - Schmucker, Scott W.

AU - Grine, Albert

AU - Lu, Ping

AU - Tracy, Lisa A.

AU - Arghavani, Reza

AU - Misra, Shashank

PY - 2021/9/27

Y1 - 2021/9/27

N2 - The atomic precision advanced manufacturing (APAM) enabled vertical tunneling field effect transistor (TFET) presents a new opportunity in microelectronics thanks to the use of ultra-high doping and atomically abrupt doping profiles. We present modeling and assessment of the APAM TFET using TCAD Charon simulation. First, we show, through a combination of simulation and experiment, that we can achieve good control of the gated channel on top of a phosphorus layer made using APAM, an essential part of the APAM TFET. Then, we present simulation results of a preliminary APAM TFET that predict transistor-like current-voltage response despite low device performance caused by using large geometry dimensions. Future device simulations will be needed to optimize geometry and doping to guide device design for achieving superior device performance.

AB - The atomic precision advanced manufacturing (APAM) enabled vertical tunneling field effect transistor (TFET) presents a new opportunity in microelectronics thanks to the use of ultra-high doping and atomically abrupt doping profiles. We present modeling and assessment of the APAM TFET using TCAD Charon simulation. First, we show, through a combination of simulation and experiment, that we can achieve good control of the gated channel on top of a phosphorus layer made using APAM, an essential part of the APAM TFET. Then, we present simulation results of a preliminary APAM TFET that predict transistor-like current-voltage response despite low device performance caused by using large geometry dimensions. Future device simulations will be needed to optimize geometry and doping to guide device design for achieving superior device performance.

UR - https://www.scopus.com/pages/publications/85119456684

U2 - 10.1109/SISPAD54002.2021.9592578

DO - 10.1109/SISPAD54002.2021.9592578

M3 - Conference contribution

SN - 9781665406857

VL - 2021-September

SP - 102

EP - 106

BT - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

ER -

Modeling and Assessment of Atomic Precision Advanced Manufacturing (APAM) Enabled Vertical Tunneling Field Effect Transistor

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