Abstract
The changes in excitation dependence of efficiency with temperature are modeled for a wurtzite InGaN light-emitting diode. The model incorporates bandstructure changes with carrier density because of screening of quantum-confined Stark effect. Bandstructure is computed by solving Poisson and k·p equations in the envelope approximation. The information is used in a dynamicalmodel for populations in momentum-resolved electron and hole states. Application of the approach shows the interplay of quantum-well and barrier emissions giving rise to shape changes in efficiency versus current density with changing temperature, as observed in some experiments.©2014 Optical Society of America.
| Original language | English |
|---|---|
| Title of host publication | Optics Express |
| Pages | 1413-1425 |
| Number of pages | 13 |
| Volume | 22 |
| Edition | 2 |
| DOIs | |
| State | Published - Jan 27 2014 |
| Externally published | Yes |
Fingerprint
Dive into the research topics of 'Modeling of temperature and excitation dependences of efficiency in an InGaN light-emitting diode'. Together they form a unique fingerprint.Cite this
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver