Molecular beam epitaxy and characterization of Al<inf> x</inf> Ga<inf>1-x</inf> As<inf> y</inf> Sb<inf>1-y</inf> (0.0 ≤x ≤ 1.0) lattice matched to InAs substrates

J. A. Lott; L. R. Dawson; E. D. Jones; I. J. Fritz; J. S. Nelson; S. R. Kurtz

doi:10.1007/BF02652926

Molecular beam epitaxy and characterization of Al<inf> x</inf> Ga<inf>1-x</inf> As<inf> y</inf> Sb<inf>1-y</inf> (0.0 ≤x ≤ 1.0) lattice matched to InAs substrates

J. A. Lott
, L. R. Dawson
, E. D. Jones
, I. J. Fritz
, J. S. Nelson
, S. R. Kurtz

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We report the molecular beam epitaxial growth of Al x Ga1-x As y Sb1-y (0.0 ≤ x ≤ 1.0) on undoped, liquid-encapsulated Czochralski, (100) oriented InAs substrates. The degree of lattice mismatch was determined by x-ray diffraction. The lattice matched materials (y ≈ 0.08 + 0.08 x) were characterized by low temperature photoluminescence, electro-reflectance, and capacitance-voltage measurements. The experimental bandgap energies agree with earlier experimental results for Al x Ga1-x Sb, and also with a self-consistent first principles pseudopotential model. The capacitance-voltage measurements indicate background acceptor concentrations for the unintentionally-doped epitaxial layers of about 2 × 1015 cm-3 at x = 1.0 to 5 × 1016 cm-3 at x ≈ 0.0. © 1990 AIME.

Original language	English
Pages (from-to)	989-993
Number of pages	5
Journal	Journal of Electronic Materials
Volume	19
Issue number	9
DOIs	https://doi.org/10.1007/BF02652926
State	Published - Sep 1 1990
Externally published	Yes

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@article{2b6b2affcc7f4c209834f961e31cc1e5,

title = "Molecular beam epitaxy and characterization of Al x Ga1-x As y Sb1-y (0.0 ≤x ≤ 1.0) lattice matched to InAs substrates",

abstract = "We report the molecular beam epitaxial growth of Al x Ga1-x As y Sb1-y (0.0 ≤ x ≤ 1.0) on undoped, liquid-encapsulated Czochralski, (100) oriented InAs substrates. The degree of lattice mismatch was determined by x-ray diffraction. The lattice matched materials (y ≈ 0.08 + 0.08 x) were characterized by low temperature photoluminescence, electro-reflectance, and capacitance-voltage measurements. The experimental bandgap energies agree with earlier experimental results for Al x Ga1-x Sb, and also with a self-consistent first principles pseudopotential model. The capacitance-voltage measurements indicate background acceptor concentrations for the unintentionally-doped epitaxial layers of about 2 {\texttimes} 1015 cm-3 at x = 1.0 to 5 {\texttimes} 1016 cm-3 at x ≈ 0.0. {\textcopyright} 1990 AIME.",

author = "Lott, \{J. A.\} and Dawson, \{L. R.\} and Jones, \{E. D.\} and Fritz, \{I. J.\} and Nelson, \{J. S.\} and Kurtz, \{S. R.\}",

year = "1990",

month = sep,

day = "1",

doi = "10.1007/BF02652926",

language = "English",

volume = "19",

pages = "989--993",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "9",

}

TY - JOUR

T1 - Molecular beam epitaxy and characterization of Al x Ga1-x As y Sb1-y (0.0 ≤x ≤ 1.0) lattice matched to InAs substrates

AU - Lott, J. A.

AU - Dawson, L. R.

AU - Jones, E. D.

AU - Fritz, I. J.

AU - Nelson, J. S.

AU - Kurtz, S. R.

PY - 1990/9/1

Y1 - 1990/9/1

N2 - We report the molecular beam epitaxial growth of Al x Ga1-x As y Sb1-y (0.0 ≤ x ≤ 1.0) on undoped, liquid-encapsulated Czochralski, (100) oriented InAs substrates. The degree of lattice mismatch was determined by x-ray diffraction. The lattice matched materials (y ≈ 0.08 + 0.08 x) were characterized by low temperature photoluminescence, electro-reflectance, and capacitance-voltage measurements. The experimental bandgap energies agree with earlier experimental results for Al x Ga1-x Sb, and also with a self-consistent first principles pseudopotential model. The capacitance-voltage measurements indicate background acceptor concentrations for the unintentionally-doped epitaxial layers of about 2 × 1015 cm-3 at x = 1.0 to 5 × 1016 cm-3 at x ≈ 0.0. © 1990 AIME.

AB - We report the molecular beam epitaxial growth of Al x Ga1-x As y Sb1-y (0.0 ≤ x ≤ 1.0) on undoped, liquid-encapsulated Czochralski, (100) oriented InAs substrates. The degree of lattice mismatch was determined by x-ray diffraction. The lattice matched materials (y ≈ 0.08 + 0.08 x) were characterized by low temperature photoluminescence, electro-reflectance, and capacitance-voltage measurements. The experimental bandgap energies agree with earlier experimental results for Al x Ga1-x Sb, and also with a self-consistent first principles pseudopotential model. The capacitance-voltage measurements indicate background acceptor concentrations for the unintentionally-doped epitaxial layers of about 2 × 1015 cm-3 at x = 1.0 to 5 × 1016 cm-3 at x ≈ 0.0. © 1990 AIME.

UR - https://www.scopus.com/pages/publications/0025491728

U2 - 10.1007/BF02652926

DO - 10.1007/BF02652926

M3 - Article

SN - 0361-5235

VL - 19

SP - 989

EP - 993

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 9

ER -

Molecular beam epitaxy and characterization of Al<inf> x</inf> Ga<inf>1-x</inf> As<inf> y</inf> Sb<inf>1-y</inf> (0.0 ≤x ≤ 1.0) lattice matched to InAs substrates

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