Molecular beam epitaxy of high-resistivity AlSb for room-temperature radiation detectors

Erin I. Vaughan; Sadhvikas Addamane; Darryl Shima; Ganesh Balakrishnan; Adam A. Hecht

doi:10.1109/NSSMIC.2015.7582283

Molecular beam epitaxy of high-resistivity AlSb for room-temperature radiation detectors

Erin I. Vaughan
, Sadhvikas Addamane
, Darryl Shima
, Ganesh Balakrishnan
, Adam A. Hecht

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

We have applied MBE to grow very high quality, potentially detector-grade AlSb material. Using semi-insulating GaAs substrates, 3 micrometers of AlSb was grown by MBE for preliminary characterization studies. In undoped samples, an average Hall mobility of 1200 cm2/Vs was found, with a Hall carrier concentration of 1010 cm-3 and a resistivity of 106 Ω-cm. Intentionally doped samples were grown using GaTe for n-type and Be for p-type conductivity in the AlSb layer to understand doping concentration effects. Further growth and measurements are being performed, carrier lifetime is being studied, and diodes are being grown by MBE to test the material for radiation response.

Original language	English
Title of host publication	2015 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2015
DOIs	https://doi.org/10.1109/NSSMIC.2015.7582283
State	Published - Oct 3 2016
Externally published	Yes

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@inproceedings{e7c87281164643cea73a99e93f80d59d,

title = "Molecular beam epitaxy of high-resistivity AlSb for room-temperature radiation detectors",

abstract = "We have applied MBE to grow very high quality, potentially detector-grade AlSb material. Using semi-insulating GaAs substrates, 3 micrometers of AlSb was grown by MBE for preliminary characterization studies. In undoped samples, an average Hall mobility of 1200 cm2/Vs was found, with a Hall carrier concentration of 1010 cm-3 and a resistivity of 106 Ω-cm. Intentionally doped samples were grown using GaTe for n-type and Be for p-type conductivity in the AlSb layer to understand doping concentration effects. Further growth and measurements are being performed, carrier lifetime is being studied, and diodes are being grown by MBE to test the material for radiation response.",

author = "Vaughan, \{Erin I.\} and Sadhvikas Addamane and Darryl Shima and Ganesh Balakrishnan and Hecht, \{Adam A.\}",

year = "2016",

month = oct,

day = "3",

doi = "10.1109/NSSMIC.2015.7582283",

language = "English",

isbn = "9781467398626",

booktitle = "2015 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2015",

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TY - GEN

T1 - Molecular beam epitaxy of high-resistivity AlSb for room-temperature radiation detectors

AU - Vaughan, Erin I.

AU - Addamane, Sadhvikas

AU - Shima, Darryl

AU - Balakrishnan, Ganesh

AU - Hecht, Adam A.

PY - 2016/10/3

Y1 - 2016/10/3

N2 - We have applied MBE to grow very high quality, potentially detector-grade AlSb material. Using semi-insulating GaAs substrates, 3 micrometers of AlSb was grown by MBE for preliminary characterization studies. In undoped samples, an average Hall mobility of 1200 cm2/Vs was found, with a Hall carrier concentration of 1010 cm-3 and a resistivity of 106 Ω-cm. Intentionally doped samples were grown using GaTe for n-type and Be for p-type conductivity in the AlSb layer to understand doping concentration effects. Further growth and measurements are being performed, carrier lifetime is being studied, and diodes are being grown by MBE to test the material for radiation response.

AB - We have applied MBE to grow very high quality, potentially detector-grade AlSb material. Using semi-insulating GaAs substrates, 3 micrometers of AlSb was grown by MBE for preliminary characterization studies. In undoped samples, an average Hall mobility of 1200 cm2/Vs was found, with a Hall carrier concentration of 1010 cm-3 and a resistivity of 106 Ω-cm. Intentionally doped samples were grown using GaTe for n-type and Be for p-type conductivity in the AlSb layer to understand doping concentration effects. Further growth and measurements are being performed, carrier lifetime is being studied, and diodes are being grown by MBE to test the material for radiation response.

UR - https://www.scopus.com/pages/publications/84994171841

U2 - 10.1109/NSSMIC.2015.7582283

DO - 10.1109/NSSMIC.2015.7582283

M3 - Conference contribution

SN - 9781467398626

BT - 2015 IEEE Nuclear Science Symposium and Medical Imaging Conference, NSS/MIC 2015

ER -

Molecular beam epitaxy of high-resistivity AlSb for room-temperature radiation detectors

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