Molecular dynamics simulations of nanoindentation of silicon nitride

Phillip Walsh; Andrey Omeltchenko; Hideaki Kikuchi; Rajiv K. Kalia; Aiichiro Nakano; Priya Vashishta

Molecular dynamics simulations of nanoindentation of silicon nitride

Phillip Walsh
, Andrey Omeltchenko
, Hideaki Kikuchi
, Rajiv K. Kalia
, Aiichiro Nakano
, Priya Vashishta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

This is a report of work in progress on 10 million atom Molecular Dynamics (MD) simulations of nanoindentation of crystalline and amorphous silicon nitride (Si3N4). Nanoindentation is used to determine mechanical properties of extremely thin films such as hardness and elastic moduli. We report load-displacement curves for several Si3N4 configurations using an idealized non-deformable indenter and analyze the local stress distributions in the vicinity of the indenter tip. Preliminary results for surface adhesion using Si3N4 for both tip and substrate are also reported.

Original language	English
Title of host publication	Materials Research Society Symposium - Proceedings
Pages	119-124
Number of pages	6
Volume	539
State	Published - Jan 1 1999
Externally published	Yes

Cite this

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title = "Molecular dynamics simulations of nanoindentation of silicon nitride",

abstract = "This is a report of work in progress on 10 million atom Molecular Dynamics (MD) simulations of nanoindentation of crystalline and amorphous silicon nitride (Si3N4). Nanoindentation is used to determine mechanical properties of extremely thin films such as hardness and elastic moduli. We report load-displacement curves for several Si3N4 configurations using an idealized non-deformable indenter and analyze the local stress distributions in the vicinity of the indenter tip. Preliminary results for surface adhesion using Si3N4 for both tip and substrate are also reported.",

author = "Phillip Walsh and Andrey Omeltchenko and Hideaki Kikuchi and Kalia, \{Rajiv K.\} and Aiichiro Nakano and Priya Vashishta",

year = "1999",

month = jan,

day = "1",

language = "English",

volume = "539",

pages = "119--124",

booktitle = "Materials Research Society Symposium - Proceedings",

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TY - GEN

T1 - Molecular dynamics simulations of nanoindentation of silicon nitride

AU - Walsh, Phillip

AU - Omeltchenko, Andrey

AU - Kikuchi, Hideaki

AU - Kalia, Rajiv K.

AU - Nakano, Aiichiro

AU - Vashishta, Priya

PY - 1999/1/1

Y1 - 1999/1/1

N2 - This is a report of work in progress on 10 million atom Molecular Dynamics (MD) simulations of nanoindentation of crystalline and amorphous silicon nitride (Si3N4). Nanoindentation is used to determine mechanical properties of extremely thin films such as hardness and elastic moduli. We report load-displacement curves for several Si3N4 configurations using an idealized non-deformable indenter and analyze the local stress distributions in the vicinity of the indenter tip. Preliminary results for surface adhesion using Si3N4 for both tip and substrate are also reported.

AB - This is a report of work in progress on 10 million atom Molecular Dynamics (MD) simulations of nanoindentation of crystalline and amorphous silicon nitride (Si3N4). Nanoindentation is used to determine mechanical properties of extremely thin films such as hardness and elastic moduli. We report load-displacement curves for several Si3N4 configurations using an idealized non-deformable indenter and analyze the local stress distributions in the vicinity of the indenter tip. Preliminary results for surface adhesion using Si3N4 for both tip and substrate are also reported.

UR - https://www.scopus.com/pages/publications/0032591909

M3 - Conference contribution

VL - 539

SP - 119

EP - 124

BT - Materials Research Society Symposium - Proceedings

ER -

Molecular dynamics simulations of nanoindentation of silicon nitride

Abstract

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