Multilevel resistance in Ti/Pt/AlO<inf>x</inf>/HfO<inf>y</inf>/Ti/Pt/Ag resistive switching devices

Farhana Anwar; John Nogan; Payman Zarkesh-Ha; Marek Osinski

doi:10.1109/NMDC.2015.7439273

Multilevel resistance in Ti/Pt/AlO<inf>x</inf>/HfO<inf>y</inf>/Ti/Pt/Ag resistive switching devices

Farhana Anwar
, John Nogan
, Payman Zarkesh-Ha
, Marek Osinski

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

This paper demonstrates the potential use of AlOx/HfOy-based resistive switching device in analog and synaptic electronics. The novelty of this work is based on the fact that a large number of states were found for both positive (10 states) and negative (22 states) biases, compared to the reported literature. Multiple states were obtained by varying the compliance current. Furthermore, the device showed very low switching voltage (< 0.3 V) and current (∼10 μA).

Original language	English
Title of host publication	2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015
DOIs	https://doi.org/10.1109/NMDC.2015.7439273
State	Published - Mar 22 2016
Externally published	Yes

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10.1109/NMDC.2015.7439273

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title = "Multilevel resistance in Ti/Pt/AlOx/HfOy/Ti/Pt/Ag resistive switching devices",

abstract = "This paper demonstrates the potential use of AlOx/HfOy-based resistive switching device in analog and synaptic electronics. The novelty of this work is based on the fact that a large number of states were found for both positive (10 states) and negative (22 states) biases, compared to the reported literature. Multiple states were obtained by varying the compliance current. Furthermore, the device showed very low switching voltage (< 0.3 V) and current (∼10 μA).",

author = "Farhana Anwar and John Nogan and Payman Zarkesh-Ha and Marek Osinski",

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AU - Anwar, Farhana

AU - Nogan, John

AU - Zarkesh-Ha, Payman

AU - Osinski, Marek

PY - 2016/3/22

Y1 - 2016/3/22

N2 - This paper demonstrates the potential use of AlOx/HfOy-based resistive switching device in analog and synaptic electronics. The novelty of this work is based on the fact that a large number of states were found for both positive (10 states) and negative (22 states) biases, compared to the reported literature. Multiple states were obtained by varying the compliance current. Furthermore, the device showed very low switching voltage (< 0.3 V) and current (∼10 μA).

AB - This paper demonstrates the potential use of AlOx/HfOy-based resistive switching device in analog and synaptic electronics. The novelty of this work is based on the fact that a large number of states were found for both positive (10 states) and negative (22 states) biases, compared to the reported literature. Multiple states were obtained by varying the compliance current. Furthermore, the device showed very low switching voltage (< 0.3 V) and current (∼10 μA).

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U2 - 10.1109/NMDC.2015.7439273

DO - 10.1109/NMDC.2015.7439273

M3 - Conference contribution

SN - 9781467393621

BT - 2015 IEEE Nanotechnology Materials and Devices Conference, NMDC 2015

ER -

Multilevel resistance in Ti/Pt/AlO<inf>x</inf>/HfO<inf>y</inf>/Ti/Pt/Ag resistive switching devices

Abstract

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