Multimillion-atom simulations of atomic-level surface stresses and pressure distribution on InAs/GaAs mesas

Xiaotao Su; Rajiv K. Kalia; Anupam Madhukar; Aiichiro Nakano; Priya Vashishta

Multimillion-atom simulations of atomic-level surface stresses and pressure distribution on InAs/GaAs mesas

Xiaotao Su
, Rajiv K. Kalia
, Anupam Madhukar
, Aiichiro Nakano
, Priya Vashishta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

Large-scale molecular dynamics simulations are performed to investigate the atomic-level stresses on InAs/GaAs mesas. The simulations are based on an interatomic-potential scheme for InAs/GaAs systems which depends on the local chemical composition. Multiresolution techniques are used to speed up the simulations. InAs/GaAs square mesas with {101}-type sidewalls are studied. The atomic-level pressure distribution and surface atomic stresses on the sidewalls with 12, 10, 8 and 6 monolayers of InAs overlayers have been calculated.

Original language	English
Title of host publication	Materials Research Society Symposium - Proceedings
Pages	269-274
Number of pages	6
Volume	584
State	Published - Jan 1 2000
Externally published	Yes

Cite this

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title = "Multimillion-atom simulations of atomic-level surface stresses and pressure distribution on InAs/GaAs mesas",

abstract = "Large-scale molecular dynamics simulations are performed to investigate the atomic-level stresses on InAs/GaAs mesas. The simulations are based on an interatomic-potential scheme for InAs/GaAs systems which depends on the local chemical composition. Multiresolution techniques are used to speed up the simulations. InAs/GaAs square mesas with \{101\}-type sidewalls are studied. The atomic-level pressure distribution and surface atomic stresses on the sidewalls with 12, 10, 8 and 6 monolayers of InAs overlayers have been calculated.",

author = "Xiaotao Su and Kalia, \{Rajiv K.\} and Anupam Madhukar and Aiichiro Nakano and Priya Vashishta",

year = "2000",

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language = "English",

volume = "584",

pages = "269--274",

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T1 - Multimillion-atom simulations of atomic-level surface stresses and pressure distribution on InAs/GaAs mesas

AU - Su, Xiaotao

AU - Kalia, Rajiv K.

AU - Madhukar, Anupam

AU - Nakano, Aiichiro

AU - Vashishta, Priya

PY - 2000/1/1

Y1 - 2000/1/1

N2 - Large-scale molecular dynamics simulations are performed to investigate the atomic-level stresses on InAs/GaAs mesas. The simulations are based on an interatomic-potential scheme for InAs/GaAs systems which depends on the local chemical composition. Multiresolution techniques are used to speed up the simulations. InAs/GaAs square mesas with {101}-type sidewalls are studied. The atomic-level pressure distribution and surface atomic stresses on the sidewalls with 12, 10, 8 and 6 monolayers of InAs overlayers have been calculated.

AB - Large-scale molecular dynamics simulations are performed to investigate the atomic-level stresses on InAs/GaAs mesas. The simulations are based on an interatomic-potential scheme for InAs/GaAs systems which depends on the local chemical composition. Multiresolution techniques are used to speed up the simulations. InAs/GaAs square mesas with {101}-type sidewalls are studied. The atomic-level pressure distribution and surface atomic stresses on the sidewalls with 12, 10, 8 and 6 monolayers of InAs overlayers have been calculated.

UR - https://www.scopus.com/pages/publications/0033710031

M3 - Conference contribution

VL - 584

SP - 269

EP - 274

BT - Materials Research Society Symposium - Proceedings

ER -

Multimillion-atom simulations of atomic-level surface stresses and pressure distribution on InAs/GaAs mesas

Abstract

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