Nanoindentation-induced amorphization in silicon carbide

The atomic-scale mechanisms governing the indentation-induced amorphization of silicon carbide (SiC) was studied. It was found that in the elastic regime the calculated P-h curve exhibits a shoulder, which is fully reversible upon unloading. In the plastic regime the P-h curve was found to be characterized by a series of load drops. These structural analyses showed that the defect simulated growth and dynamics of dislocation loops were responsible for the crystalline to amorphous (c→a) trasition.