Nanoindentation of silicon nitride: A multimillion-atom molecular dynamics study

Phillip Walsh; Andrey Omeltchenko; Rajiv K. Kalia; Aiichiro Nakano; Priya Vashishta; Subhash Saini

doi:10.1063/1.1535263

Nanoindentation of silicon nitride: A multimillion-atom molecular dynamics study

Phillip Walsh
, Andrey Omeltchenko
, Rajiv K. Kalia
, Aiichiro Nakano
, Priya Vashishta
, Subhash Saini

Research output: Contribution to journal › Article › peer-review

76 Scopus citations

Abstract

Ten-million-atom molecular dynamics (MD) simulations of nanoindentation of crystalline and amorphous Si3N4 was presented. The indentor was a square-based pyramid with a height of 90 Å and an apex corner angle of 90°. Results demonstrated the feasibility of using MD simulations to rank material properties, like hardness, and to improve on the quality of interatomic potentials for various materials.

Original language	English
Pages (from-to)	118-120
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	1
DOIs	https://doi.org/10.1063/1.1535263
State	Published - Jan 6 2003
Externally published	Yes

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10.1063/1.1535263

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title = "Nanoindentation of silicon nitride: A multimillion-atom molecular dynamics study",

abstract = "Ten-million-atom molecular dynamics (MD) simulations of nanoindentation of crystalline and amorphous Si3N4 was presented. The indentor was a square-based pyramid with a height of 90 {\AA} and an apex corner angle of 90°. Results demonstrated the feasibility of using MD simulations to rank material properties, like hardness, and to improve on the quality of interatomic potentials for various materials.",

author = "Phillip Walsh and Andrey Omeltchenko and Kalia, \{Rajiv K.\} and Aiichiro Nakano and Priya Vashishta and Subhash Saini",

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doi = "10.1063/1.1535263",

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journal = "Applied Physics Letters",

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T1 - Nanoindentation of silicon nitride: A multimillion-atom molecular dynamics study

AU - Walsh, Phillip

AU - Omeltchenko, Andrey

AU - Kalia, Rajiv K.

AU - Nakano, Aiichiro

AU - Vashishta, Priya

AU - Saini, Subhash

PY - 2003/1/6

Y1 - 2003/1/6

N2 - Ten-million-atom molecular dynamics (MD) simulations of nanoindentation of crystalline and amorphous Si3N4 was presented. The indentor was a square-based pyramid with a height of 90 Å and an apex corner angle of 90°. Results demonstrated the feasibility of using MD simulations to rank material properties, like hardness, and to improve on the quality of interatomic potentials for various materials.

AB - Ten-million-atom molecular dynamics (MD) simulations of nanoindentation of crystalline and amorphous Si3N4 was presented. The indentor was a square-based pyramid with a height of 90 Å and an apex corner angle of 90°. Results demonstrated the feasibility of using MD simulations to rank material properties, like hardness, and to improve on the quality of interatomic potentials for various materials.

UR - https://www.scopus.com/pages/publications/0037421384

U2 - 10.1063/1.1535263

DO - 10.1063/1.1535263

M3 - Article

SN - 0003-6951

VL - 82

SP - 118

EP - 120

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

ER -

Nanoindentation of silicon nitride: A multimillion-atom molecular dynamics study

Abstract

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