Abstract
The lasing threshold currents of high-power GaAs laser diodes and arrays increased less than 40 % after exposure to 1014 n/cm”, Threshold current rose by 100 to 250 % and a possible increased susceptibility to facet damage was observed at 1015 n/cm2. © 1989 IEEE
| Original language | English |
|---|---|
| Pages (from-to) | 2076-2082 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Nuclear Science |
| Volume | 36 |
| Issue number | 6 |
| DOIs | |
| State | Published - Jan 1 1989 |
| Externally published | Yes |
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